Zobrazeno 1 - 10
of 124
pro vyhledávání: '"Hiroaki Honjo"'
Publikováno v:
AIP Advances, Vol 12, Iss 12, Pp 125317-125317-10 (2022)
The influence of the sidewall damage on the thermal stability factor (Δ) of quad-interface magnetic tunnel junctions (quad-MTJs) was investigated through a string method-based micromagnetic simulation. The quad-MTJs consist of a reference layer/MgO-
Externí odkaz:
https://doaj.org/article/41795573fd574cc48385f4879a4ab3f3
Autor:
Tetsuo Endoh, Hiroaki Honjo
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 8, Iss 4, p 44 (2018)
Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operat
Externí odkaz:
https://doaj.org/article/d40316a03e88421eb6ad69b830d38599
Autor:
Sadahiko Miura, K. Nishioka, M. Yasuhira, H. Inoue, Hiroaki Honjo, Shinji Ikeda, T. Watanabe, Hiroshi Naganuma, T. V. A. Nguyen, Y. Noguchi, Tetsuo Endoh, T. Nasuno
Publikováno v:
IEEE Transactions on Electron Devices. 68:2680-2685
We successfully developed 25-nm quad CoFeB/MgO-interfaces perpendicular magnetic tunnel junction (quad-MTJ) with enough thermal stability. To fabricate the quad-MTJ, a physical vapor deposition (PVD) process for depositing novel free layer and low re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baad726c52047847ee5e46874ca2c560
https://doi.org/10.1109/ted.2021.3074103
https://doi.org/10.1109/ted.2021.3074103
Autor:
Shoji Ikeda, Masanori Natsui, T. Nasuno, Hiroki Sato, Tetsuo Endoh, H. Inoue, Takaho Tanigawa, Masaaki Niwa, T. Yoshiduka, Hiroaki Honjo, Takahiro Hanyu, Yitao Ma, M. Yasuhira, Akira Tamakoshi, Chaoliang Zhang, Hui Shen, Y. Noguchi, Shunsuke Fukami, T. Watanabe, Hideo Ohno
Publikováno v:
IEEE Journal of Solid-State Circuits. 56:1116-1128
The development of new functional memories using emerging nonvolatile devices has been widely investigated. Spin-transfer torque magnetoresistive random access memory (STT-MRAM) has become new technology platform to overcome the issue in power consum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4af7e5d6d0845fc8bd9778fa7712ad9
https://doi.org/10.1109/jssc.2020.3039800
https://doi.org/10.1109/jssc.2020.3039800
Autor:
Yitao Ma, Hiroaki Honjo, Hiroki Koike, K. Nishioka, Shoji Ikeda, T. Watanabe, Sadahiko Miura, Tetsuo Endoh, H. Inoue, T. Yoshiduka, Y. Noguchi, M. Yasuhira, Takaho Tanigawa, T. Nasuno
Publikováno v:
IEEE Transactions on Magnetics. 57:1-9
The development of STT-MRAM technology is currently in progress and has been successively disclosed by major LSI vendors recently. In order to advance STT-MRAM technology and expand its areas of application, challenges relative to further device scal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9948098930bb88ccabe5d807f8639d51
https://doi.org/10.1109/tmag.2020.3038110
https://doi.org/10.1109/tmag.2020.3038110
Autor:
H. Inoue, T. Naijo, Masaaki Niwa, K. Kimura, S. Nagamachi, Hiroaki Honjo, Tetsuo Endoh, A. Oshurahunov, Shoji Ikeda
Publikováno v:
IEEE Transactions on Magnetics. 57:1-7
We have successfully observed the process-induced microstructure of the ultrafine CoFeB–MgO-based magnetic tunnel junctions with a perpendicular easy axis (p-MTJs) down to junction size of less than 20 nm using scanning transmission electron micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::912b2f24319214a67c32e347ff0f06d4
https://doi.org/10.1109/tmag.2020.3008436
https://doi.org/10.1109/tmag.2020.3008436
Autor:
K. Nishioka, Sadahiko Miura, H. Inoue, Hiroaki Honjo, Hiroshi Naganuma, T. V. A. Nguyen, M. Yasuhira, T. Watanabe, Takaho Tanigawa, Tetsuo Endoh, Shoji Ikeda, Masaaki Niwa, Y. Noguchi, Toru Yoshizuka
Publikováno v:
IEEE Transactions on Electron Devices. 67:5368-5373
We fabricated a quadruple-interface perpendicular magnetic tunnel junction (MTJ) (Quad-MTJ) down to 33 nm using physical vapor-deposition, reactive ion etching, and damage-control integration process technologies that we developed under a 300-mm proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73df82849d517913f3060245e493a058
https://doi.org/10.1109/ted.2020.3025749
https://doi.org/10.1109/ted.2020.3025749
Autor:
Hiroshi Naganuma, T. V. A. Nguyen, Masaaki Niwa, M. Yasuhira, Yasushi Endo, Tetsuo Endoh, K. Nishioka, Hiroaki Honjo, Shoji Ikeda
Publikováno v:
IEEE Transactions on Magnetics. 56:1-4
We investigated the influence of hard mask (HM) materials on tunnel magnetoresistance (TMR) properties and magnetic properties for the magnetic tunnel junctions with pependicular easy axis (p-MTJs) with double CoFeB/MgO interface annealed at 400 °C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04364b5feccd03093ef5ba228fd1e78d
https://doi.org/10.1109/tmag.2020.3004576
https://doi.org/10.1109/tmag.2020.3004576
Autor:
Shoji Ikeda, Y. Noguchi, Hiroaki Honjo, H. Inoue, T. Watanabe, K. Nishioka, Hiroki Sato, Takaho Tanigawa, Sadahiko Miura, M. Yasuhira, Tetsuo Endoh
Publikováno v:
IEEE Transactions on Electron Devices. 67:995-1000
We have proposed a novel quad-interface magnetic tunnel junction (MTJ) technology which brings forth an increase of both thermal stability factor $\Delta $ and switching efficiency defined as the ratio of $\Delta $ to intrinsic critical current ${I}_
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::281347b3972399e6d0dd7b427cd9cba9
https://doi.org/10.1109/ted.2020.2966731
https://doi.org/10.1109/ted.2020.2966731
Autor:
T. Watanabe, Takahiro Hanyu, Yitao Ma, Akira Tamakoshi, Hiroaki Honjo, Hiroki Koike, Hiroki Sato, Shoji Ikeda, Y. Noguchi, Daisuke Suzuki, Tetsuo Endoh, Masanori Natsui, T. Nasuno, Hideo Ohno, Takaho Tanigawa, M. Yasuhira
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:2991-3004
The demand for energy-efficient, high-performance microcontroller units (MCUs) for the use in power-supply-critical Internet-of-Things (IoT) sensor-node applications has witnessed a substantial increase. In response, research concerning the developme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cab9c5cdfb26b2f832fd5e2f776f4916
https://doi.org/10.1109/jssc.2019.2930910
https://doi.org/10.1109/jssc.2019.2930910