Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Hiroaki Arimura"'
Publikováno v:
IEEE TRANSACTIONS ON ELECTRON DEVICES
The low-frequency (LF) noise characterization of Si0.7Ge0.3 pFinFETs and transistors’ performance were analyzed for different NH3 post deposition annealing (PDA) temperatures. The flicker noise of these pFinFETs is dominated by carrier number fluct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::822184d837c0c5ea0afb1308f24eb495
https://doi.org/10.1109/ted.2022.3212324
https://doi.org/10.1109/ted.2022.3212324
Autor:
Zhicheng Wu, Jacopo Franco, Anne Vandooren, Hiroaki Arimura, Lars-Ake Ragnarsson, Philippe Roussel, Ben Kaczer, Dimitri Linten, Nadine Collaert, Guido Groeseneken
Publikováno v:
IEEE Transactions on Electron Devices. 69:915-921
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373894dfbd4ac69b6c7f2d5d50ef012d
https://doi.org/10.1109/ted.2022.3141983
https://doi.org/10.1109/ted.2022.3141983
Autor:
Geoffrey Pourtois, Julien Ryckaert, Andriy Hikavyy, Alessio Spessot, Geert Eneman, Naoto Horiguchi, Philippe Matagne, Hiroaki Arimura, Roger Loo, An De Keersgieter, Paola Favia, Clement Porret, Anabela Veloso
Publikováno v:
IEEE Transactions on Electron Devices. 68:5380-5385
Stress simulations of Si0.5Ge0.5-channel nanowire transistors with typical 5 nm technology-node dimensions are performed to study the effect of layout on the channel stress generated by virtual substrates, by epitaxial mismatch from source/drain epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::694d7b20ce41464793fc48ea71611d09
https://doi.org/10.1109/ted.2021.3076754
https://doi.org/10.1109/ted.2021.3076754
Autor:
Yosuke Kimura, Kurt Wostyn, Naoto Horiguchi, Hiroaki Arimura, Thierry Conard, Dirk Rondas, Lars-Ake Ragnarsson, Andriy Hikavyy
Publikováno v:
Solid State Phenomena. 314:49-53
The steam oxidation of SiGe shows a transition from Si-like to Ge-like oxidation behavior depending on Ge concentration and oxidation temperature. Ge-like oxidation is described by the generation of oxygen vacancies (VO) at the interface between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e89f989638b1677a358a89940ce9dea
https://doi.org/10.4028/www.scientific.net/ssp.314.49
https://doi.org/10.4028/www.scientific.net/ssp.314.49
Publikováno v:
IEEE Transactions on Electron Devices. 67:4713-4719
The impact of different process options on the low-frequency noise (LFN) performance and reliability of Ge nFinFETs is investigated. The results show that the LFN is mainly determined by carrier number fluctuations, and the density of traps in the hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13afed5d42940337f3447bb66e84d7a2
https://doi.org/10.1109/ted.2020.3019366
https://doi.org/10.1109/ted.2020.3019366
Autor:
Duan Xie, Alberto Vinicius de Oliveira, Guillaume Boccardi, Nadine Collaert, Hiroaki Arimura, Cor Claeys, Naoto Horiguchi, Eddy Simoen
Publikováno v:
IEEE Transactions on Electron Devices. 67:2872-2877
This article presents an experimental, room temperature, low-frequency noise characterization of germanium n-channel fin-field-effect transistors (finFETs) integrated on silicon. After determining the dominant mechanism in the noise spectrum, the mai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cea21fbf5ab0a6fdefc298741704e9a9
https://doi.org/10.1109/ted.2020.2990714
https://doi.org/10.1109/ted.2020.2990714
Autor:
Narendra Parihar, Goutham Arutchelvan, Jacopo Franco, Sylvain Baudot, Ann Opedebeeck, Steven Demuynck, Hiroaki Arimura, Lars-Ake Ragnarsson, Jerome Mitard, Vincent De Heyn, Abdelkarim Mercha
Publikováno v:
2021 IEEE International Integrated Reliability Workshop (IIRW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::379c0969b9f758c2c5cea0b7c7f20ab2
https://doi.org/10.1109/iirw53245.2021.9635605
https://doi.org/10.1109/iirw53245.2021.9635605
Autor:
Guillaume Boccardi, Hiroaki Arimura, Roger Loo, Samuel Suhard, Daire J. Cott, Thierry Conard, Naoto Horiguchi, L.-A. Ragnarsson, V. De Heyn, Jerome Mitard, Dan Mocuta, Liesbeth Witters, H. Dekkers, D. H. van Dorp, Nadine Collaert, Kurt Wostyn
Publikováno v:
IEEE Transactions on Electron Devices. 66:5387-5392
This article reports Si-passivated Ge nFinFETs with significantly improved GmSAT/SSSAT and positive bias temperature instability (PBTI) reliability enabled by an improved replacement metal gate (RMG) high- ${k}$ last process. SiO2 dummy gate oxide (D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dd5f23cc243b67badeb99d80e2e88e1
https://doi.org/10.1109/ted.2019.2950332
https://doi.org/10.1109/ted.2019.2950332
Autor:
P. Schuddinck, Jerome Mitard, Bertrand Parvais, Doyoung Jang, Alessio Spessot, Geert Eneman, Nadine Collaert, Neha Sharan, F. M. Bufler, D. Yakimets, Marie Garcia Bardon, Hiroaki Arimura, Anda Mocuta, Khaja Ahmad Shaik
Publikováno v:
IEEE Transactions on Electron Devices. 66:4997-5002
In this article, we explore different device and standard cell architectures for scaling the Germanium fin field-effect transistor (FinFET) and nanosheet (NS) at the sub-5-nm node. It is demonstrated that the Germanium device provides approximately 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d70b918f94afcf9050344a8a13385dfd
https://doi.org/10.1109/ted.2019.2944336
https://doi.org/10.1109/ted.2019.2944336
Autor:
Liesbet Witters, Jerome Mitard, Eddy Simoen, Xiaofei Jia, Jiahao Liu, Naoto Horiguchi, Pan Zhao, Liang He, Nadine Collaert, Hua Chen, Yahui Su, Cor Claeys, Hiroaki Arimura
Publikováno v:
IEEE Transactions on Electron Devices. 66:1050-1056
Low-frequency noise is used to estimate the quality of the gate stack for planar Ge nMOSFETs with different effective work function metals and cap layers. It is shown that replacing TiN by a TiAl-based metal gate will induce a significant decline of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c34823696e1bb04ef00aa880645a5a72
https://doi.org/10.1109/ted.2018.2883529
https://doi.org/10.1109/ted.2018.2883529