Zobrazeno 1 - 10
of 60
pro vyhledávání: '"Hiro Niimi"'
Publikováno v:
Handbook of Semiconductor Manufacturing Technology ISBN: 9781315213934
Handbook of Semiconductor Manufacturing Technology, Second Edition
Handbook of Semiconductor Manufacturing Technology, Second Edition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6073534e2352cda33c56a53ee8c079fc
https://doi.org/10.1201/9781420017663-9
https://doi.org/10.1201/9781420017663-9
Autor:
James J. Chambers, R. A. Chapman, Clive M. Freeman, Eric M. Vogel, Husam N. Alshareef, A. Li-Fatou, Hiro Niimi, Erich Wimmer, Christopher L. Hinkle, Rohit Galatage, J. B. Shaw
Publikováno v:
ECS Transactions. 35:285-295
Effective work function (EWF) changes of TiN/HfO2 annealed at low temperatures in different ambient environments are correlated to the atomic concentration of oxygen, nitrogen, and aluminum at the metal/dielectric interface. Low EWFs (4.0 eV) are obt
Autor:
Patrick S. Lysaght, Husam N. Alshareef, Seung-Chul Song, Chanro Park, Dim-Lee Kwong, Kisik Choi, Gennadi Bersuker, H. Rusty Harris, Hong-bae Park, Huang-Chun Wen, Byoung Hun Lee, Raj Jammy, Prashant Majhi, Hiro Niimi, H. Luan
Publikováno v:
Microelectronic Engineering. 85:2-8
A review of literature combined with recent experimental results addressing the intrinsic and extrinsic factors controlling the effective work function (EWF) of metal gate electrodes on Hf-based high-K dielectrics is discussed. Through a systematic s
Autor:
Hiro Niimi, Gerald Lucovsky
Publikováno v:
Journal of Physics: Condensed Matter. 16:S1815-S1837
Remote plasma-assisted oxidation of SiC is a low temperature process, 300 °C, for the formation of device quality interfaces on SiC. This paper discusses two aspects of the process: (i) the motivation for eliminating high temperature oxidation proce
Publikováno v:
Applied Surface Science. 166:485-491
This paper builds on previous work that has demonstrated that interfacial suboxide transition regions at Si–SiO2 interfaces modify tunneling oscillations in the Fowler–Nordheim regime. This paper extends this approach to the direct tunneling regi
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1230-1233
It has been shown that low temperature (300 °C) remote plasma enhanced processing can separately and independently control interface formation and bulk oxide deposition on silicon substrates. Plasma processing is followed by a low thermal budget the
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1163-1168
Direct tunneling limits aggressive scaling of thermally grown oxides to about 1.6 nm, a thickness at which the tunneling current density Jg at 1 V is ∼1 A/cm2. This article demonstrates that stacked gate dielectrics prepared by remote plasma proces
Publikováno v:
Applied Surface Science. :50-61
Direct tunneling limits aggressive scaling of thermally-grown oxides to about ∼1.6 nm, a thickness at which the tunneling current at 1 V is ∼1 A/cm2. This paper presents experimental results, supported by interface characterizations and model cal
Autor:
Hiro Niimi, Gerald Lucovsky
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:3185-3196
We demonstrate three different ways to incorporate nitrogen at Si–SiO2 interfaces: (i) an O2/He plasma oxidation of the Si surface followed by an N2/He plasma nitridation, (ii) an N2/He plasma nitridation of the Si surface, and (iii) a Si3N4 film d
Publikováno v:
Microelectronic Engineering. 48:303-306
Interfacial defect densities are typically two orders of magnitude higher at [III–V]-dielectric interfaces than at SiSiO 2 interfaces. This paper demonstrates GaN devices with significantly reduced interfacial defect densities using a two step r