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Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors
Autor:
Ono, Yukinori, Morizur, Jean-Francois, Nishiguchi, Katsuhiko, Takashina, Kei, Yamaguchi, Hiroshi, Hiratsuka, Kazuma, Horiguchi, Seiji, Inokawa, Hiroshi, Takahashi, Yasuo
We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a clear peak
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607806
