Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Hippolyte Hirwa"'
Autor:
Wenjian Chen, Hippolyte Hirwa, Jörg Ohland, Teoman Taskesen, Ulf Mikolajczak, Devendra Pareek, Jürgen Parisi, Levent Gütay
Publikováno v:
PLoS ONE, Vol 16, Iss 1, p e0245390 (2021)
The formation of molybdenum diselenide (MoSe2) is widely observed at the back-contact interface for copper zinc tin selenide (CZTSe) thin-film solar cells. Depending on individual selenium (Se) supply and thermal conditions for forming CZTSe absorber
Externí odkaz:
https://doaj.org/article/7658c04072ee45db908acd05b507eca2
Publikováno v:
Thin Solid Films. 759:139463
Publikováno v:
Solid-State Electronics. 141:58-64
Two dimensional layers of dichalcogenide materials have attracted a lot of interests due to their potential applications in optoelectronics and energy storage. Hence, there is a large interest in establishing cheap, scalable processes for the product
Publikováno v:
Nanoscale. 9:6575-6580
A large lateral size and low dimensions are prerequisites for next generation electronics. Since the first single layer MoS2 transistor reported by Kis's group in 2011, layered transition metal dichalcogenides (TMDs) have been demonstrated to be the
Autor:
Teoman, Taskesen, Devendra, Pareek, Janet, Neerken, Johannes, Schoneberg, Hippolyte, Hirwa, David, Nowak, Jürgen, Parisi, Levent, Gütay
Publikováno v:
RSC advances. 9(36)
For the fabrication of a kesterite-type CZTSe absorber material, stacked elemental-alloy layers (SEAL) precursor consisting of Cu-Sn alloy and elemental Zn layers offer the possibility of enhanced process control due to their advantages such as impro
Autor:
Veit Wagner, Hippolyte Hirwa
Publikováno v:
Organic Electronics. 25:112-120
A transient current measurement technique which does not need light stimulus is developed. This illumination-free transient current (IFTC) technique offers insights on trapping states characteristics such as the capture time of the trapping states, t
Publikováno v:
Organic Electronics. 24:303-314
Impedance and transient current measurements on metal–insulator–semiconductor (MIS) capacitors are used as tools to thoroughly investigate the bulk and interface electronic transport properties of semiconducting polymers, i.e. poly(3-hexylthiophe
Publikováno v:
Journal of Physics D: Applied Physics. 50:495107
Publikováno v:
Journal of Physics D: Applied Physics; 12/13/2017, Vol. 50 Issue 49, p1-1, 1p