Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Hinsche, N. F."'
Publikováno v:
Phys. Rev. Applied 22, 014004, 2024
Cold metals have recently gained attention as a promising platform for innovative devices, such as tunnel diodes with negative differential resistance (NDR) and field-effect transistors with subthreshold swings below the thermionic limit. Recently di
Externí odkaz:
http://arxiv.org/abs/2312.08473
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggeste
Externí odkaz:
http://arxiv.org/abs/2202.06752
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Phys. Rev. B 89, 035439 (2014)
We present ab initio electronic structure calculations based on density functional theory for the thermoelectric properties of Bi$_2$Te$_3$ films. Conductivity and thermopower are computed in the diffusive limit of transport based on the Boltzmann eq
Externí odkaz:
http://arxiv.org/abs/1312.4808
Combining first principles density functional theory and semi-classical Boltzmann transport, the anisotropic Lorenz function was studied for thermoelectric Bi$_{2}$Te$_{3}$/Sb$_{2}$Te$_{3}$ superlattices and their bulk constituents. It was found that
Externí odkaz:
http://arxiv.org/abs/1206.6124
Autor:
Hinsche, N. F., Yavorsky, B. Yu., Gradhand, M., Czerner, M., Winkler, M., König, J., Böttner, H., Mertig, I., Zahn, P.
Publikováno v:
Phys. Rev. B 86, 085323 (2012)
The thermoelectric transport properties of $\text{Bi}_2\text{Te}_3/\text{Sb}_2\text{Te}_3$superlattices are analyzed on the basis of first-principles calculations and semi-classical Boltzmann theory. The anisotropy of the thermoelectric transport und
Externí odkaz:
http://arxiv.org/abs/1206.4078
Publikováno v:
J. Phys.: Condens. Matter 24 275501, 2012
The anisotropic thermoelectric transport properties of bulk silicon strained in [111]-direction were studied by detailed first-principles calculations focussing on a possible enhancement of the power factor. Electron as well as hole doping were exami
Externí odkaz:
http://arxiv.org/abs/1205.6313
On the basis of detailed ab initio studies the influence of strain on the anisotropy of the transport distribution of the thermoelectrics Bi$_2$Te$_3$ and Sb$_2$Te$_3$ was investigated. Both tellurides were studied in their own, as well as in their c
Externí odkaz:
http://arxiv.org/abs/1109.0186
Publikováno v:
Phys. Rev. B 84, 165214 (2011)
On the basis of detailed first-principles calculations and semi-classical Boltzmann transport, the anisotropic thermoelectric transport properties of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ under strain were investigated. It was found that due to compensation
Externí odkaz:
http://arxiv.org/abs/1108.1304
Publikováno v:
Phys. Rev. B 82, 214110 (2010)
The tunneling electroresistance (TER) for ferroelectric tunnel junctions (FTJs) with BaTiO_{3} (BTO) and PbTiO}_{3} (PTO) barriers is calculated by combining the microscopic electronic structure of the barrier material with a macroscopic model for th
Externí odkaz:
http://arxiv.org/abs/1007.3681