Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Hinojosa, Manuel"'
Publikováno v:
Solar Energy Materials and Solar Cells, Volume 248, 2022, 112000, ISSN 0927-0248
The growth of heavily doped tunnel junctions in inverted metamorphic multijunction solar cells induces a strong diffusion of Zn via a point-defects-assisted mechanism. The redistribution of Zn can compensate the n-type doping in the emitter of the Ga
Externí odkaz:
http://arxiv.org/abs/2211.14277
Autor:
Caño, Pablo, Hinojosa, Manuel, Cifuentes, Luis, Nguyen, Huy, Morgan, Aled, Marrón, David Fuertes, García, Iván, Johnson, Andrew, Stolle, Ignacio Rey
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC), 2019, pp. 2513-2518
A tandem GaAsP/SiGe solar cell has been developed employing group-IV reverse buffer layers grown on silicon substrates with a subsurface porous layer. Reverse buffer layers facilitate a reduction in the threading dislocation density with limited thic
Externí odkaz:
http://arxiv.org/abs/2205.12664
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
Zinc-diffusion can induce multiple failures in the electrical performance of a multijunction solar cell. In this work, we show an important Zn-diffusion from the AlGaInP back-surface-field layer to the emitter of the GaInP top cell of an inverted mul
Externí odkaz:
http://arxiv.org/abs/2205.07606
Autor:
García, Ivan, Barrutia, Laura, Dadgostar, Shabnam, Hinojosa, Manuel, Johnson, Andrew, Rey-Stolle, Ignacio
Publikováno v:
Solar Energy Materials and Solar Cells, vol. 225, p. 111034, Jun. 2021
Reducing the formation of cracks during growth of GaInP/GaInAs/Ge 3-junction solar cells on Ge|Si virtual substrates has been attempted by thinning the structure, namely the Ge bottom cell and the GaInAs middle cell. The theoretical analysis performe
Externí odkaz:
http://arxiv.org/abs/2104.03288
We investigate the dynamics of Zn diffusion in MOVPE-grown AlGaInP/GaInP systems by the comparison of different structures that emulate the back-surface field (BSF) and base layers of a GaInP subcell integrated into an inverted multijunction solar ce
Externí odkaz:
http://arxiv.org/abs/2012.13918
Tellurium allows attaining heavy n-type doping levels in GaAs, which is suited to achieve very low contact resistivities in solar cells. Besides, it modifies the energy bandgap of MOVPE-grown GaInP by reducing the group-III sublattice ordering and pr
Externí odkaz:
http://arxiv.org/abs/1911.11685
Autor:
Nuñez, Neftali, Vazquez, Manuel, Martín, Pablo, Bautista, Jesus, Hinojosa, Manuel, Algora, Carlos
Publikováno v:
In Solar Energy Materials and Solar Cells 15 August 2023 259
Autor:
García, Iván, Hinojosa, Manuel, Lombardero, Iván, Cifuentes, Luis, Rey-Stolle, Ignacio, Algora, Carlos, Nguyen, Huy, Edwards, Stuart, Morgan, Aled, Johnson, Andrew
Publikováno v:
Proceedings of the IEEE Photovoltaic Specialists Conference 2019
Virtual substrates based on thin Ge layers on Si by direct deposition have achieved high quality recently. Their application to high efficiency III-V solar cells is analyzed in this work. Replacing traditional Ge substrates with Ge/Si virtual substra
Externí odkaz:
http://arxiv.org/abs/1909.09499
Autor:
Algora, Carlos, García, Iván, Delgado, Marina, Peña, Rafael, Vázquez, Carmen, Hinojosa, Manuel, Rey-Stolle, Ignacio
Publikováno v:
In Joule 16 February 2022 6(2):340-368
Autor:
Caño, Pablo, Hinojosa, Manuel, García, Iván, Beanland, Richard, Fuertes Marrón, David, Ruiz, Carmen M., Johnson, Andrew, Rey-Stolle, Ignacio
Publikováno v:
In Solar Energy December 2021 230:925-934