Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hind Jaafar"'
Publikováno v:
Nanoscience &Nanotechnology-Asia. 9:291-297
Background: A novel Dual Material Gate Graded Channel and Dual Oxide Thickness Cylindrical Gate (DMG-GC-DOT) MOSFET is presented in this paper. Methods: Analytical model of drain current is developed using a quasi-two-dimensional cylindrical form of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55b119437998214fb58435857ca5f452
https://doi.org/10.2174/2210681208666180813122145
https://doi.org/10.2174/2210681208666180813122145
Publikováno v:
International Journal of Reconfigurable and Embedded Systems (IJRES). 9:34
A compact model for dual-material gate graded-channel and dual-oxidethickness with two dielectric constant different cylindrical gate (DMG-GC-DOTTDCD) MOSFET was investigated in terms of transconductance, drainconductance and capacitance. Short chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::797998fa4df3bd176e707cb218a691c6
https://doi.org/10.11591/ijres.v9.i1.pp34-41
https://doi.org/10.11591/ijres.v9.i1.pp34-41
Publikováno v:
2018 4th International Conference on Optimization and Applications (ICOA).
In this paper, we present a comparison study on the performance of cylindrical gate (CG) MOSFET with graded channel doping (GC), dual metal gate (DMG) and dual oxide thickness (DOT). We develop compact model of short channel characteristics like drai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334843c32dffbb44206a8de5886638a7
https://doi.org/10.1109/icoa.2018.8370495
https://doi.org/10.1109/icoa.2018.8370495