Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Hin, Celine"'
Autor:
Worden, Jarod, Hin, Celine
Developing materials that can withstand the intense environments of nuclear fusion reactors is critical in developing long-term commercial viability for energy production. Tungsten is the primary candidate as a plasma facing material due to its excep
Externí odkaz:
http://arxiv.org/abs/2312.05227
Autor:
Nellis, Christopher, Hin, Celine
A Kinetic Monte Carlo (KMC) model was created to simulate the insertion of transmutation He atoms into nanostructured ferritic alloys (NFAs) under neutron irradiation. Interstitial He atoms migrate through the NFA until becoming trapped in bubbles of
Externí odkaz:
http://arxiv.org/abs/2202.06189
Autor:
Nellis, Christopher, Hin, Celine
While developing nuclear materials, predicting their behavior under long-term irradiation regimes spanning decades poses a significant challenge. We developed a novel Kinetic Monte Carlo (KMC) model to explore the precipitation behavior of Y-Ti-O oxi
Externí odkaz:
http://arxiv.org/abs/2202.03641
Publikováno v:
Physical Review Materials, 2, 083401, (2018)
In this work we developed a practical and general modeling approach for thermal conductivity of metals and metal alloys that integrates ab initio and semiempirical physics-based models to maximize the strengths of both techniques. The approach suppor
Externí odkaz:
http://arxiv.org/abs/1808.01271
An exact Quantum Kinetic Monte Carlo method is proposed to calculate electron transport for 1D Fermi Hubbard model. The method is directly formulated in real time and can be applied to extract time dependent dynamics of general interacting Fermion mo
Externí odkaz:
http://arxiv.org/abs/1704.07545
Amorphous insulating oxides play a significant role in the contemporary electronic industry. Understanding the band alignment of heterogeneous interfaces containing amorphous structures helps to better control the carrier transport property at the in
Externí odkaz:
http://arxiv.org/abs/1704.06978
The oxygen vacancy is a crucial intrinsic defect in metal-ultrathin oxide semiconductor heterostructures, and its formation at an interface is of great importance in determining the device performance and degradation. This paper presents an ab initio
Externí odkaz:
http://arxiv.org/abs/1611.03411
Autor:
Tea, Eric, Hin, Celine
Publikováno v:
Phys. Chem. Chem. Phys., 2016, 18, 22706--22711
In this work, we provide a detailed analysis of phosphorene performance as n-type and p-type active materials. The study is based on first principles calculation of phosphorene electronic structure, and resulting electron and hole scattering rates an
Externí odkaz:
http://arxiv.org/abs/1610.09265
Publikováno v:
J. Phys. D: Appl. Phys. 49 (2016) 095304 (8pp)
The dielectric breakdown at metal-oxide interfaces is a critical electronic device failure mechanism. Electronic tunneling through dielectric layers is a well-accepted explanation for this phenomenon. Theoretical band alignment studies, providing inf
Externí odkaz:
http://arxiv.org/abs/1610.08550
A number of electronic devices involve metal/oxide interfaces in their structure where the oxide layer plays the role of electrical insulator. As the downscaling of devices continues, the oxide thickness can spread over only a few atomic layers, maki
Externí odkaz:
http://arxiv.org/abs/1610.08371