Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Himanshi Awasthi"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract A Hydrogen fuel cell (HFC) broad range associated with Internet of Things (IoT) technologies that require slightly less and constant electricity made possible by remote climate monitoring connections. Novelty demonstrates a miniature HFC bas
Externí odkaz:
https://doaj.org/article/3fbd8771347c4ff295fe6b7507228bad
Publikováno v:
Silicon. 14:9361-9366
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed44b8b34d61810da5536b11867f340f
https://doi.org/10.1007/s12633-021-01624-0
https://doi.org/10.1007/s12633-021-01624-0
Publikováno v:
Energy Storage. 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e038fb2e2fc17fb60be0a8cf5321bfac
https://doi.org/10.1002/est2.405
https://doi.org/10.1002/est2.405
Publikováno v:
Silicon. 14:5495-5502
This article presents the analytical modeling of the subthreshold drain current of junctionless channel-modulated double-material double-gate ( $$ JL $$ - $$ CM $$ - $$ DMDG $$ ) MOSFET. The first time under the full depletion mode, the center channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95b6d127986c507b27843cac693846fe
https://doi.org/10.1007/s12633-021-01327-6
https://doi.org/10.1007/s12633-021-01327-6
Autor:
Amit Kumar Pandey, Nitish Kumar, Abhinav Gupta, Vidyadhar Gupta, Himanshi Awasthi, Sanjeev Rai
Publikováno v:
Journal of Electronic Materials. 50:3686-3691
In this paper, analytical modeling of center channel potential has been performed for graded-channel gate-all-around (GC-GAA) junctionless field-effect transistor (JLFET). The three-dimensional (3D) Poisson’s equation has been solved to discover th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b0b48da425aae6b880f998899ca57a8
https://doi.org/10.1007/s11664-021-08913-9
https://doi.org/10.1007/s11664-021-08913-9
Publikováno v:
Silicon. 14:2679-2686
Silicon-based Nanotube Junction-less Double-Gate-All-Around (NJL-DGAA) MOSFETs has become a promising solution to high-speed ULSI chip design. However, the change in surrounding temperature affects its performances, such as hot carrier injection (HCI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::878229040e453111302b119614882a11
https://doi.org/10.1007/s12633-021-01069-5
https://doi.org/10.1007/s12633-021-01069-5
Publikováno v:
Silicon. 13:2071-2075
In the present paper, the dielectric pocket (DP) technology has been employed in the Gate-All-Around (GAA) MOSFETs to improve the scalability and performance of the device. The upgraded immunity towards short-channel effects (SCEs) and elevation in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67a2b6965bb8a00db1d65335ec39f037
https://doi.org/10.1007/s12633-020-00610-2
https://doi.org/10.1007/s12633-020-00610-2
Autor:
Himanshi Awasthi, Deepak Sigroha, Vikrant Varshney, Manish Kumar Rai, Sanjeev Rai, Abhinav Gupta
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811926303
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d6434d9f63f3b3b3d2fe7911f293c8e
https://doi.org/10.1007/978-981-19-2631-0_47
https://doi.org/10.1007/978-981-19-2631-0_47
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811627606
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6315552a064408a81aeda5814dbe338e
https://doi.org/10.1007/978-981-16-2761-3_13
https://doi.org/10.1007/978-981-16-2761-3_13
Publikováno v:
Lecture Notes in Electrical Engineering ISBN: 9789811627606
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbef0fa3f8e0cbaa54e84a0e570ad354
https://doi.org/10.1007/978-981-16-2761-3_8
https://doi.org/10.1007/978-981-16-2761-3_8