Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Himani Saraswat"'
Autor:
Aditya Sharma, Ksh. Devarani Devi, Mayora Varshney, Himani Saraswat, Surekha Chaudhary, Byeong-hyeon Lee, So-Hee Kim, Sung Ok Won, Keun Hwa Chae, Ankush Vij, Ram K. Sharma, Hyun-Joon Shin
Publikováno v:
Journal of Electronic Materials. 51:1900-1904
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a48590bbabf09804e874f5a1e55533e
https://doi.org/10.1007/s11664-022-09454-5
https://doi.org/10.1007/s11664-022-09454-5
Autor:
Hyun-Joon Shin, Surekha Chaudhary, Himani Saraswat, Keun Hwa Chae, Mayora Varshney, Aditya Sharma, Sung Ok Won, Jai Parkash
Publikováno v:
International Nano Letters. 10:71-79
Regardless of much curiosity in the synthesis and diversifying properties of the polymorphs of gallium oxide, they are still unrevealed due to their nanoscale size and structural disorders. In this study, convincing methods have been applied to achie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88214d534d6ca00109567174d5cc8d2e
https://doi.org/10.1007/s40089-020-00295-w
https://doi.org/10.1007/s40089-020-00295-w
Publikováno v:
International Journal of Computer Applications. 167:12-14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd1b2491b605fdf5b17407aa2be3ba21
https://doi.org/10.5120/ijca2017914367
https://doi.org/10.5120/ijca2017914367
Autor:
Devarani Devi, Aditya Sharma, Surekha Chaudhary, Himani Saraswat, Sung Ok Won, Hyun-Joon Shin, Fouran Singh, Mayora Varshney
Publikováno v:
Vacuum. 181:109655
Investigations on the extrinsic defects induced alteration in B–O6 octahedra, energy band-structure amendments and physical assets of ABO3 perovskites are technologically important and require modest approaches for the defect creation and their inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85cf337ff4a21a324a138410b5972f4a
https://doi.org/10.1016/j.vacuum.2020.109655
https://doi.org/10.1016/j.vacuum.2020.109655
Autor:
Aditya Sharma, Pawan K. Kulriya, Sung Ok Won, Devarani Devi, Surekha Chaudhary, Fouran Singh, Himani Saraswat, Hyun-Joon Shin, Jai Parkash
Publikováno v:
Vacuum. 179:109481
SnO2 thin films have been deposited on Si substrates using RF-magnetron sputtering and implanted by 200 keV Cu− ions with ion fluence of 2.79 × 1016 ion/cm2 and 4 × 1016 ion/cm2. Post annealing is done on the pristine and Cu− ion-implanted SnO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11a8ac825fc2595fd8cf86571ea3e048
https://doi.org/10.1016/j.vacuum.2020.109481
https://doi.org/10.1016/j.vacuum.2020.109481