Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Him Chan Park"'
Publikováno v:
Solid-State Electronics. 140:8-11
We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an ano
Autor:
Wook Bahng, Jeong Hyun Moon, Nam-Kyun Kim, Him-Chan Park, Hyoung Wook Kim, Ogyun Seok, Chang Heon Yang, Sang Cheol Kim, In Ho Kang, Moon Kyong Na
Publikováno v:
Journal of the Korean Physical Society. 71:652-656
In this paper, the effect of surface passivation on the breakdown voltage of 4H-SiC Schottky barrier diode (SBD) was investigated. The SBDs having various passivation structures were fabricated. The passivation layers consist of 2 different ones: (1)
Autor:
In Ho Kang, Moon Kyong Na, Ogyun Seok, Jeong Hyun Moon, H. W. Kim, Sang Cheol Kim, Wook Bahng, Nam Kyun Kim, Him-Chan Park, Chang Heon Yang
Publikováno v:
Journal of the Korean Physical Society. 71:707-710
In this study, we fabricated and characterized graphene/molecule/graphene (GMG) vertical junctions with aryl alkane monolayers. The constituent molecules were chemically self-assembled via electrophilic diazonium reactions into a monolayer on the gra
Fabrication of a 1.7-kV Schottky barrier diode with improved forward current-voltage characteristics
Autor:
Him-Chan Park, Chang Heon Yang, Ogyun Seok, Wook Bahng, In Ho Kang, Jeong Hyun Moon, Moon Kyong Na
Publikováno v:
Journal of the Korean Physical Society. 68:810-814
This paper presents the effects of thermal annealing performed at different temperatures on the forward current-voltage (I-V) characteristics to fabricate a 1.7-kV 4H-SiC Schottky barrier diode (SBD) with improved forward performances. To optimize th
Autor:
Hyuk Kee Sung, Chang Heon Yang, Myunglae Jo, Jae-Gil Lee, Hunwoo Lee, Byongju Kim, Ju Ho Lee, Jeong Hyun Moon, Guna Kim, Jihoon Jeong, B. C. Lee, Jongmin Lee, Sohyun Ahn, Dong Hee Shin, Kwang-Seok Seo, Sung Un Cho, Sang Hoon Lee, Inho Jeong, Rena Lee, Hyun Soo Kim, Yeon Jung Kim, Kang Seog Lee, Jun Seok Jeong, Youngman Kim, Jin Hyuck Heo, Jingtai Cao, Xiaohui Zhao, Hyunchul Jang, Dongyeon Lee, Jang Bo Shim, Kyuseok Kim, Sangwook Lim, Chun Hyung Cho, Sang Cheol Kim, Sangmo Koo, June Won Hyun, Sang Hyuk Im, Suk Lee, Ho-Young Cha, Kimin Hong, Ogyun Seok, Wook Bahng, Kwang Jun Ahn, Gang Bae Kim, Hee-Cheol Kim, Moon Kyong Na, Seok Kim, Kyungil Kim, Ashadun Nobi, Jong Hoon Jung, Hyunwook Song, Haijun Gu, Hyosung Cho, Nam-Kyun Kim, Soyoung Park, Sang Goon Kim, Minsik Lee, Geon Joon Lee, Hyun Do Huh, Seokyoon Kang, Him Chan Park, Dae Hong Ko, Su Keun Eom, In Ho Kang, Yoo Seung Hong, Seung-Bo Shim, Hyunwoo Lim, Yun Daniel Park, Seryeyohan Cho, Wei Liu, Sungwan Cho, Seran Park, Dong-Hwan Kim, Zhaokun Li, Young Joon Ko, Gyungsoon Park, Seungjin Hwang, Kyubo Kim, Chulkyu Park, Tae Jun Yu, Eun Ha Choi, Kang Il Lee, Uikyu Je, Samju Cho, Jae Woo Lee, Hyoung Wook Kim, Changwoo Seo
Publikováno v:
Journal of the Korean Physical Society. 71:1075-1075
Autor:
In Ho Kang, Moon Kyong Na, Ogyun Seok, Jeong Hyun Moon, Wook Bahng, Him-Chan Park, Chang Heon Yang
Publikováno v:
Journal of the Korean Physical Society; Mar2016, Vol. 68 Issue 6, p810-814, 5p, 1 Diagram, 1 Chart, 6 Graphs