Zobrazeno 1 - 10
of 593
pro vyhledávání: '"Hilgenkamp, H."'
Autor:
Leermakers, I., Rubi, K., Yang, M., Kerdi, B., Goiran, M., Escoffier, W., Rana, A. S., Smink, A. E. M., Brinkman, A., Hilgenkamp, H., Maan, J. C., Zeitler, U.
We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo ef
Externí odkaz:
http://arxiv.org/abs/2108.09156
Autor:
Schlotter, W. F., Beye, M., Zohar, S., Coslovich, G., Dakovski, G. L., Lin, M. -F., Liu, Y., Reid, A., Stubbs, S., Walter, P., Nakahara, K., Hart, P., Miedema, P. S., LeGuyader, L., Hofhuis, K., Le, Phu Tran Phong, Elshof, Johan E. ten, Hilgenkamp, H., Koster, G., Verbeek, X. H., Smit, S., Golden, M. S., Durr, H. A., Sakdinawat, A.
X-ray absorption spectroscopy (XAS) is a powerful and well established technique with sensitivity to elemental and chemical composition. Despite these advantages, its implementation has not kept pace with the development of ultrafast pulsed x-ray sou
Externí odkaz:
http://arxiv.org/abs/2006.13968
Autor:
Lebedev, N., Stehno, M., Rana, A., Reith, P., Gauquelin, N., Verbeeck, J., Hilgenkamp, H., Brinkman, A., Aarts, J.
The Anomalous Hall Effect (AHE) is an important quantity in determining the properties and understanding the behavior of the two-dimensional electron system forming at the interface of SrTiO3-based oxide heterostructures. The occurrence of AHE is oft
Externí odkaz:
http://arxiv.org/abs/2002.11408
Autor:
Smink, A. E. M., Prabowo, B., Stadhouder, B., Gauquelin, N., Schmitz, J., Hilgenkamp, H., van der Wiel, W. G.
At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report repeatable
Externí odkaz:
http://arxiv.org/abs/1909.12586
Autor:
Smink, A. E. M., Stehno, M. P., de Boer, J. C., Brinkman, A., van der Wiel, W. G., Hilgenkamp, H.
Publikováno v:
Phys. Rev. B 97, 245113 (2018)
By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects on the sup
Externí odkaz:
http://arxiv.org/abs/1801.02881
Scanning superconducting quantum interference device microscopy (SSM) is a scanning probe technique that images local magnetic flux, which allows for mapping of magnetic fields with high field and spatial accuracy. Many studies involving SSM have bee
Externí odkaz:
http://arxiv.org/abs/1708.07302
Autor:
Smink, A. E. M., de Boer, J. C., Stehno, M. P., Brinkman, A., van der Wiel, W. G., Hilgenkamp, H.
Publikováno v:
Phys. Rev. Lett. 118, 106401 (2017)
The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective ban
Externí odkaz:
http://arxiv.org/abs/1610.02299
Autor:
Boschker, H., Harada, T., Asaba, T., Ashoori, R., Boris, A. V., Hilgenkamp, H., Hughes, C. R., Holtz, M. E., Li, L., Muller, D. A., Nair, H., Reith, P., Wang, X. Renshaw, Schlom, D. G., Soukiassian, A., Mannhart, J.
Publikováno v:
Phys. Rev. X 9, 011027 (2019)
Atomically thin ferromagnetic and conducting electron systems are highly desired for spintronics, because they can be controlled with both magnetic and electric fields. We present (SrRuO3)1-(SrTiO3)5 superlattices and single-unit-cell-thick SrRuO3 sa
Externí odkaz:
http://arxiv.org/abs/1609.08901
Publikováno v:
Supercond. Sci. Technol. 27 044017, 2014
We show that the quality of Nd1.85Ce0.15CuO4 films grown by pulsed laser deposition can be enhanced by using a non-stoichiometric target with extra copper added to suppress the formation of a parasitic (Nd, Ce)2O3 phase. The properties of these films
Externí odkaz:
http://arxiv.org/abs/1507.06613
Publikováno v:
APL Mat. 3, 086101 (2015)
Scanning nano-focused X-ray diffraction (nXRD) and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd$_\t
Externí odkaz:
http://arxiv.org/abs/1507.06598