Influence of the Highly-Doped Drain Implantation and the Window Size on Defect Creation in p⁺/n Si1-XGex Source/Drain Junctions

Autor: Kamruzzaman Chowdhury, M., Vissouvanadin, B., Bargallo Gonzalez, Mireia, Bhouri, N., Verheyen, Peter, Hikavyy, H., Richard, O., Geypen, J., Bender, H., Loo, Roger, Claeys, C., Simoen, Eddy, Machkaoutsan, V., Tomasini, P., Thomas, S.G, Lu, J.P., Weijtmans, J.W., Wise, R.

Publikováno v: Diffusion and Defect Data Part B: Solid State Phenomena; October 2007, Vol. 131 Issue: 1 p95-100, 6p