Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Hikaru Uegaki"'
Publikováno v:
Thin Solid Films. 636:431-437
Cu 2 SnS 3 (CTS) is the promising absorber of thin-film solar cell due to earth-abandant and non-toxic element. Influence of sodium (Na) on physical properties of CTS layers is investigated. In this work, CTS films with different Na concentrations ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f52439b9160d6bf5a99e9d393adaa225
https://doi.org/10.1016/j.tsf.2017.06.044
https://doi.org/10.1016/j.tsf.2017.06.044
Autor:
Takashi Minemoto, Hikaru Uegaki, Daisuke Hironiwa, Kenta Aoyagi, Yuki Nukui, Jakapan Chatana, Kiichi Kosaka, Zeguo Tang
Publikováno v:
Solar Energy Materials and Solar Cells. 143:311-318
Reaction path for fabrication of Cu 2 SnSe 3 (CTSe) film by selenization of Cu–Sn precursor was investigated via in-situ X-ray diffraction (XRD) as well as glazing incident XRD (GIXRD) measurements. Cross-sectional scanning electron microscopy (SEM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae7542cd14311a0be62fb28081d96a0
https://doi.org/10.1016/j.solmat.2015.07.025
https://doi.org/10.1016/j.solmat.2015.07.025
Autor:
Takashi Minemoto, Yuki Nukui, Kiichi Kosaka, Daisuke Hironiwa, Zeguo Tang, Jakapan Chantana, Hikaru Uegaki
Publikováno v:
physica status solidi (a). 212:2289-2296
Reaction processes for fabrication of Cu2SnS3 (CTS) thin films by sulfurization of Cu–Sn precursors are investigated by X-ray diffraction (XRD) patterns and scanning electron microscope (SEM) images. The results reveal that the S atoms first react
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1431c4ff4602859b1cdb0971404f1f28
https://doi.org/10.1002/pssa.201532121
https://doi.org/10.1002/pssa.201532121
Autor:
Jakapan Chantana, Daisuke Hironiwa, Naoki Ashida, Takashi Minemoto, Hikaru Uegaki, Masashi Murata
Publikováno v:
physica status solidi c. 12:638-642
The 2-µm-thick Cu(In,Ga)Se2 (CIGS) absorber is divided into two areas, low defect density layer (front side) and high defect density layer (back side). In this paper, the optimized thickness of the low defect density layer and the high defect densit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b11050d8686b44929ff114378408de5
https://doi.org/10.1002/pssc.201400242
https://doi.org/10.1002/pssc.201400242
Publikováno v:
Journal of Alloys and Compounds. 608:213-219
The creation of secondary phases, such as Cu 2 − x Se and SnSe, and their influence on electrical properties of Cu 2 SnSe 3 (CTSe) thin films fabricated by selenization of Cu–Sn metal precursors are investigated. The Cu 2− x Se content in CTSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c7a00943a7536650a165572209e12a3
https://doi.org/10.1016/j.jallcom.2014.04.098
https://doi.org/10.1016/j.jallcom.2014.04.098