Výsledky vyhledávání - "High-temperature operating life"

A STUDY FOCUSING ON THE EFFECTS OF HTOL STRESS ON THE LUMINESCENCE SPECTRUM OF GAN DIODES TO CHARACTERIZE COMPONENT DEGRADATION

Autor: Kavanagh, Shawn R.

Wide bandgap (WBG) semiconductor technology allows devices to be operated at higher voltages, currents, temperatures, and frequencies than does conventional silicon-based narrow bandgap semiconductors. These characteristics are advantageous to milita

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2778::b8aa8c3b38eb3ce0e20d1de91a617755
https://hdl.handle.net/10945/71072

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Accelerated Stress Tests and Statistical Reliability Analysis of Metal-Oxide/GaN Nanostructured Sensor Devices

Autor: Ratan Debnath, Abhishek Motayed, Ashfaque Hossain Khan, Mulpuri V. Rao

Publikováno v: IEEE Transactions on Device and Materials Reliability. 20:742-747

In this work, sensor die/process and packaging reliabilities of metal-oxide/GaN nanowire-based gas sensors have been studied for the first time, using industry standard accelerated lifetime tests, such as- High Temperature Operating Life, High Temper

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f20e6627a1e5630f7e28adc075c0b733
https://doi.org/10.1109/tdmr.2020.3028786

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Reliability study of custom designed ADC for the Jiangmen underground neutrino observatory

Autor: J. Ren, Jun Hu, Ru-yi Jin, Zhe Ning, Xiaoshan Jiang

Publikováno v: Radiation Detection Technology and Methods. 4:203-207

The Jiangmen underground neutrino observatory (JUNO) is the largest and most precise liquid scintillator detector under construction in the south of China. The front-end readout electronics system will be installed very close to the photomultiplier t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b4abb3ac5d87417538a7642fcd2df69
https://doi.org/10.1007/s41605-020-00171-3

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A RELIABILITY STUDY ON THE EFFECTS OF HTOL AND HIGH-CURRENT DENSITY STRESS TESTING ON COMMERCIAL-GRADE VERTICAL N-TYPE PD/GAN SCHOTTKY DIODES

Autor: Clemmer, Burnell A.

Traditional silicon-based power electronics have approached their performance limits for high-power electronic applications. The U.S. Navy is actively pursuing the implementation of wide bandgap (WBG) semiconductor materials to realize reliable devic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2778::b2ec79bea98ec305f7cf1f258e06af35
https://hdl.handle.net/10945/68313

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Metallization Reliability Assessment for Via related Defect Density

Autor: Faizah Abu Bakar, Muhammad Haniff Mehat, Yew Huang Lau

Publikováno v: 2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM).

In modern CMOS technologies, interconnect or metallization reliability is part of an assessment for process robustness of the vias and aluminium metal lines. Typically these tests - Electromigration and Stressmigration occurs during process or techno

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::731d18ac930f03a5d26c6b6846663264
https://doi.org/10.1109/rsm52397.2021.9511609

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Electrical Interconnection and Bonding by Nano-Locking

Autor: Frank G. Shi, Jielin Guo, Yu-Chou Shih

Publikováno v: Nanomaterials, Vol 11, Iss 1589, p 1589 (2021)
Nanomaterials
Volume 11
Issue 6

The growing demand for increased chip performance and stable reliability calls for the development of novel off-chip interconnection and bonding methods that can process good electrical, thermal, and mechanical performance simultaneously as well as s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6f5d529d8219682334470703795d1da
https://pubmed.ncbi.nlm.nih.gov/34204330

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Investigation of the Failure Mechanism of InGaAs-pHEMT under High Temperature Operating Life Tests

Autor: Shinichi Osada, Shigeyuki Ishiyama, Masafumi Hirata, Keita Matsuda, Ken Nakata, Akio Oya, Tomio Sato, Toshiki Yoda, Yoshihide Komatsu, Atsushi Nitta, Yasunori Tateno

Publikováno v: IRPS

The purpose of this study is to investigate the physical mechanism of degradation of InGaAs-pHEMT under high temperature operating life (HTOL) tests. Using the measurements of the S-parameters before and after HTOL tests, we found that gate-source an

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b497a4dc1691868d751f7e412adb3c0
https://doi.org/10.1109/irps46558.2021.9405166

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Thermal vulnerability detection in integrated electronic and photonic circuits using infrared thermography

Autor: Davide Moroni, Bushra Jalil, Bilal Hussain, Maria Antonietta Pascali, Paolo Ghelfi, Giovanni Serafino, Muhammad Imran

Publikováno v: Applied optics (2004, Online) 59 (2020): E97–E106. doi:10.1364/AO.389960
info:cnr-pdr/source/autori:Hussain B.; Jalil B.; Pascali M.A.; Imran M.; Serafino G.; Moroni D.; Ghelfi P./titolo:Thermal vulnerability detection in integrated electronic and photonic circuits using infrared thermography/doi:10.1364%2FAO.389960/rivista:Applied optics (2004, Online)/anno:2020/pagina_da:E97/pagina_a:E106/intervallo_pagine:E97–E106/volume:59

Failure prediction of any electrical/optical component is crucial for estimating its operating life. Using high temperature operating life (HTOL) tests, it is possible to model the failure mechanisms for integrated circuits. Conventional HTOL standar

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a3e83962735b38b49713511bdba0761
https://pubmed.ncbi.nlm.nih.gov/32543519

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