Combining HRTEM–EELS nano-analysis with capacitance–voltage measurements to evaluate high-κ thin films deposited on Si and Ge as candidate for future gate dielectrics

Autor: S. Schamm-Chardon, Pierre-Eugène Coulon, S. Baldovino, Marco Fanciulli, Luca Lamagna, Claudia Wiemer

Publikováno v: Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.419-422. ⟨10.1016/j.mee.2010.10.012⟩
Microelectronic Engineering, 2011, 88 (4), pp.419-422. ⟨10.1016/j.mee.2010.10.012⟩
Microelectronic engineering 88 (2011): 419–422.
info:cnr-pdr/source/autori:Schamm-Chardon S, Coulon PE, Lamagna L, Wiemer C, Baldovino S, Fanciulli M/titolo:Combining HRTEM-EELS nano-analysis with capacitance-voltage measurements to evaluate high-kappa thin films deposited on Si and Ge as candidate for future gate dielectrics/doi:/rivista:Microelectronic engineering/anno:2011/pagina_da:419/pagina_a:422/intervallo_pagine:419–422/volume:88

Aberration corrected transmission electron microscopy and electron spectroscopy are combined with electrical measurements for the quantitative description of the structural, chemical and dielectric parameters of rare earth/transition metal oxides thi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97d037490c10db0f411cf84efdb1efec
https://doi.org/10.1016/j.mee.2010.10.012