Zobrazeno 1 - 10
of 2 315
pro vyhledávání: '"High-electron mobility transistor (HEMT)"'
Publikováno v:
Applied Sciences, Vol 14, Iss 23, p 11429 (2024)
Millimeter-wave (mm-Wave) phased array systems need to meet the transmitter (Tx) equivalent isotropic radiated power (EIRP) requirement, and that depends mainly on the design of two key sub-components: (1) the antenna array and (2) the Tx power ampli
Externí odkaz:
https://doaj.org/article/2a2efce5012a414495ad1195bcd99196
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 243-248 (2024)
The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing. The performance of such LNAs is ultimately limited by the properties of the active
Externí odkaz:
https://doaj.org/article/6ab426f8d1854ca4955498db08225d60
Autor:
Xiaolong Li, Xin Wang, Mohan Liu, Kunfeng Zhu, Guohua Shui, Qiwen Zheng, Jiangwei Cui, Wu Lu, Yudong Li, Qi Guo
Publikováno v:
IEEE Access, Vol 12, Pp 35410-35416 (2024)
In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type gate. Combined with experimental frequency-dependent conductance ( $\
Externí odkaz:
https://doaj.org/article/5e137cc1f052421786d1919f9d516eda
Autor:
Nicholas C. Miller, Andrea Arias-Purdue, Erdem Arkun, David Brown, James F. Buckwalter, Robert L. Coffie, Andrea Corrion, Daniel J. Denninghoff, Michael Elliott, Dave Fanning, Ryan Gilbert, Daniel S. Green, Florian Herrault, Ben Heying, Casey M. King, Eythan Lam, Jeong-Sun Moon, Petra V. Rowell, Georges Siddiqi, Ioulia Smorchkova, Joe Tai, Jansen Uyeda, Mike Wojtowicz
Publikováno v:
IEEE Journal of Microwaves, Vol 3, Iss 4, Pp 1134-1146 (2023)
This article presents a set of measured benchmarks for the noise and gain performance of six different millimeter-wave (mm-wave) gallium nitride (GaN) high electron mobility transistor (HEMT) technologies fabricated at four different foundries in the
Externí odkaz:
https://doaj.org/article/5804e21f09df408e99c176f577a6bee9
Publikováno v:
IEEE Access, Vol 11, Pp 27267-27279 (2023)
This paper presents a novel nonlinear behavioral modeling methodology based on long-short-term memory (LSTM) networks for gallium nitride (GaN) high-electron-mobility transistors (HEMTs). There are both theoretical foundations and practical implement
Externí odkaz:
https://doaj.org/article/30ccd858eaca4ae38da88d799de21a95
Autor:
Junji Kotani, Junya Yaita, Kenji Homma, Shirou Ozaki, Atsushi Yamada, Masaru Sato, Toshihiro Ohki, Norikazu Nakamura
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 101-106 (2023)
This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on free-standing AlN substrates with a record-high output power density of 24.4 W/mm at the X-band. A high-drain current operation of 1.4 A/mm was realized by employing high-
Externí odkaz:
https://doaj.org/article/579d0f3250cb4141af3604f80d5ed5d0
Autor:
Reza Nikandish
Publikováno v:
IEEE Journal of Microwaves, Vol 3, Iss 1, Pp 441-452 (2023)
GaN integrated circuit technologies have dramatically progressed over the recent years. The prominent feature of GaN high-electron mobility transistors (HEMTs), unparalleled output power densities, has created a paradigm shift in the established and
Externí odkaz:
https://doaj.org/article/f65e3ee38d21405a8819ff9592ec66c1
Publikováno v:
Sensors, Vol 24, Iss 4, p 1087 (2024)
A 28 GHz digitally controlled 6-bit phase shifter with a precision calibration technique in GaN high-electron mobility transistor (HEMT) technology is presented for Ka-band phased-array systems and applications. It comprises six stages, in which stag
Externí odkaz:
https://doaj.org/article/8b263b1e6bf94554b401aaf73841ca77
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