Zobrazeno 1 - 10
of 45
pro vyhledávání: '"High Temperature Route for Si Cells"'
8th World Conference on Photovoltaic Energy Conversion; 102-106
A novel approach for interdigitated back contacted (IBC) solar cell production featuring polycrystalline silicon on interfacial oxide (poly-Si/SiOx) passivating contacts on both pol
A novel approach for interdigitated back contacted (IBC) solar cell production featuring polycrystalline silicon on interfacial oxide (poly-Si/SiOx) passivating contacts on both pol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c8dcd03539c68060f3b898cc026d2bb
8th World Conference on Photovoltaic Energy Conversion; 22-28
The present study investigates the passivation of layer stacks consisting of an interfacial oxide, LPCVD deposited polycrystalline silicon (poly-Si) and PECVD deposited silicon nitrid
The present study investigates the passivation of layer stacks consisting of an interfacial oxide, LPCVD deposited polycrystalline silicon (poly-Si) and PECVD deposited silicon nitrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94723d801436e4564055c454cd935bac
8th World Conference on Photovoltaic Energy Conversion; 110-112
High efficiency solar cell concepts rely on thin-film surface passivation layers, often deposited by CVD. Many of these concepts use AlOx/SiNy:H stacks which are investigated within
High efficiency solar cell concepts rely on thin-film surface passivation layers, often deposited by CVD. Many of these concepts use AlOx/SiNy:H stacks which are investigated within
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a3c8a3b6739de5bd429c4aa01ef303
8th World Conference on Photovoltaic Energy Conversion; 95-97
We present passivating contacts for silicon solar cells using an interfacial layer of SiO2 grown by immersion in hot HNO3 and in-situ doped layers of both polarities grown by plasma e
We present passivating contacts for silicon solar cells using an interfacial layer of SiO2 grown by immersion in hot HNO3 and in-situ doped layers of both polarities grown by plasma e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc8687d884c968ce4c55a6812deb418b
8th World Conference on Photovoltaic Energy Conversion; 88-90
A p-TOPCon rear emitter solar cell was implemented in this study. The front surface field is formed by low pressure BCl3 diffusion. The recombination current density of the front surf
A p-TOPCon rear emitter solar cell was implemented in this study. The front surface field is formed by low pressure BCl3 diffusion. The recombination current density of the front surf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8285419ab3a8f7fb80a8fd8a0beff314
8th World Conference on Photovoltaic Energy Conversion; 98-101
In recent years, crystalline silicon solar cell efficiency in mass production has increased by 0.5 to 0.6% per year. New cell technologies must keep this developing speed to enter ma
In recent years, crystalline silicon solar cell efficiency in mass production has increased by 0.5 to 0.6% per year. New cell technologies must keep this developing speed to enter ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a43437ed681fed276aa316cd6e772fb
Autor:
Kuznicki, Z.
8th World Conference on Photovoltaic Energy Conversion; 113-118
According to Shockley-Queisser theory, the efficiency of single junction Si solar cells is unequivocally limited to about 30%. This limit can be overcome by localized nanostructurin
According to Shockley-Queisser theory, the efficiency of single junction Si solar cells is unequivocally limited to about 30%. This limit can be overcome by localized nanostructurin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63dd099bea8ab9f81d8592a9f4b8939c
Autor:
Mack, Sebastian, Kafle, Bishal, Teßmann, Christopher, Krieg, Katrin, Bashardoust, Sattar, Lohmüller, Elmar, Belledin, Udo, Saint-Cast, Pierre, Höffler, Hannes, Ourinson, Daniel, Fellmeth, Tobias, Steinhauser, Bernd, Kluska, Sven, Wolf, Andreas
8th World Conference on Photovoltaic Energy Conversion; 29-34
This work reports on the status of industrial TOPCon solar cell development at Fraunhofer ISE. The baseline process makes use of Cz-Si:P wafers of M2 size, a TOPCon stack consisting o
This work reports on the status of industrial TOPCon solar cell development at Fraunhofer ISE. The baseline process makes use of Cz-Si:P wafers of M2 size, a TOPCon stack consisting o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::846ed4716ee82959842a82bee6bd57e7
8th World Conference on Photovoltaic Energy Conversion; 91-94
In this article, an interdigitated back passivated contact (IBPC) solar cell, a new type of heterojunction solar cell with a rear side tunnel oxide passivated contact (TOPCon) structu
In this article, an interdigitated back passivated contact (IBPC) solar cell, a new type of heterojunction solar cell with a rear side tunnel oxide passivated contact (TOPCon) structu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfc47f83d39c9656594c7499f5ca09f9
Autor:
Dullweber, T., Mertens, V., Stöhr, M., Langlois, J., Mettner, L., Baumann, U., Haase, F., Brendel, R., Libal, J., Hähnel, A., Müller, A., Naumann, V., Vogt, A., Ambrosius, N., Pernau, T., Haverkamp, H.
8th World Conference on Photovoltaic Energy Conversion; 35-39
In this paper, we report a novel manufacturing process sequence for POLO IBC solar cells applying a local PECVD SiOxNy/n-a-Si deposition through a glass shadow mask to form the struct
In this paper, we report a novel manufacturing process sequence for POLO IBC solar cells applying a local PECVD SiOxNy/n-a-Si deposition through a glass shadow mask to form the struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2941eadfdda5fb59c12be6af10800920