Zobrazeno 1 - 10
of 19 123
pro vyhledávání: '"High Electron Mobility transistor"'
Autor:
Song, Qihao
Wide-bandgap gallium nitride (GaN) high electron mobility transistors (HEMTs) are gaining increased adoption in applications like mobile electronics and data centers. Benefitting from the high channel mobility and the high breakdown field of GaN, GaN
Externí odkaz:
https://hdl.handle.net/10919/121146
Publikováno v:
Results in Physics, Vol 64, Iss , Pp 107952- (2024)
This study presents an analysis of an AlGaN/GaN high-electron-mobility transistor (HEMT) with a triple-trench structure (TT-HEMT) for the enhancement of breakdown voltage, which is often limited by the high electric field near the gate edge. Using CO
Externí odkaz:
https://doaj.org/article/f480d83f390f45ea9ef7028d6ff7f806
Publikováno v:
Smart Nanocomposites. 2018, Vol. 8 Issue 2, p155-160. 6p.
Autor:
Delgado-Notario, Juan A.1 juanandn@usal.es, Velazquez-Perez, Jesus E.1 js@usal.es, Meziani, Yahya M.1 meziani@usal.es, Fobelets, Kristel2 k.fobelets@imperial.ac.uk
Publikováno v:
Sensors (14248220). Feb2018, Vol. 18 Issue 2, p1-15. 15p. 2 Black and White Photographs, 1 Diagram, 1 Chart, 8 Graphs.
Publikováno v:
Applied Sciences, Vol 14, Iss 23, p 11429 (2024)
Millimeter-wave (mm-Wave) phased array systems need to meet the transmitter (Tx) equivalent isotropic radiated power (EIRP) requirement, and that depends mainly on the design of two key sub-components: (1) the antenna array and (2) the Tx power ampli
Externí odkaz:
https://doaj.org/article/2a2efce5012a414495ad1195bcd99196
Publikováno v:
Results in Physics, Vol 60, Iss , Pp 107701- (2024)
In this study, recessed-gate AlGaN/GaN MOSFETs were fabricated using a novel recess etching method––TMAH wet etching with Cu ion implantation. This innovative approach injects Cu ions selectively into the target AlGaN layer, creating defects that
Externí odkaz:
https://doaj.org/article/3e647258f10a47059e3038da87040ad8
Autor:
Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 965-973 (2024)
This paper demonstrated high-output-power and high-efficiency power amplifier (PA) monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the use of InPbased metal–oxide–semiconductor high-electron-mobility transistor
Externí odkaz:
https://doaj.org/article/74698a919443403894f8fa8759ab55b2
Publikováno v:
IEEE Access, Vol 12, Pp 90525-90534 (2024)
Wide-band gap semiconductor devices based on GaN materials, such as high electron mobility transistors (HEMT), are gradually replacing traditional Si devices in industrial applications owing to their excellent electrothermal properties. Nonetheless,
Externí odkaz:
https://doaj.org/article/b3505bdca05244bf93d371a4a4b78328
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 243-248 (2024)
The InP high-electron-mobility transistor (HEMT) is employed in cryogenic low-noise amplifiers (LNAs) for the readout of faint microwave signals in quantum computing. The performance of such LNAs is ultimately limited by the properties of the active
Externí odkaz:
https://doaj.org/article/6ab426f8d1854ca4955498db08225d60
Autor:
Xiaolong Li, Xin Wang, Mohan Liu, Kunfeng Zhu, Guohua Shui, Qiwen Zheng, Jiangwei Cui, Wu Lu, Yudong Li, Qi Guo
Publikováno v:
IEEE Access, Vol 12, Pp 35410-35416 (2024)
In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type gate. Combined with experimental frequency-dependent conductance ( $\
Externí odkaz:
https://doaj.org/article/5e137cc1f052421786d1919f9d516eda