Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Hideyuki Uehigashi"'
1
Quality Evaluation of 150 mm 4H-SiC Grown at over 1.5 mm/h by High-Temperature Chemical Vapor Deposition Method
Autor: Takeshi Okamoto, Hideyuki Uehigashi, Takahiro Kanda, Nobuyuki Ohya, Akiyoshi Horiai, Soma Sakakibara, Takashi Kanemura, Kiyoshi Betsuyaku, Norihiro Hoshino, Isaho Kamata, Hidekazu Tsuchida
Publikováno v: Solid State Phenomena. 342:105-112
To reduce manufacturing costs, high-quality 150 mm 4H-SiC wafers were grown at over 1.5 mm/h by high-temperature chemical vapor deposition. The dislocations in the initial growth stage did not increase compared with those in the seed crystal. The dis
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6146bf83dc3de382ad5bbe70a5a0ece6
https://doi.org/10.4028/p-09h52t
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2
Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
Autor: Okamoto Takeshi, Nobuyuki Ohya, Norihiro Hoshino, Hideyuki Uehigashi, Takahiro Kanda, Isaho Kamata, Hidekazu Tsuchida, Hironari Kuno, Yuichiro Tokuda
Publikováno v: Materials Science Forum. 1004:5-13
The process conditions for fast growth of 4 in. 4H-polytype SiC (4H-SiC) single crystals were studied for high-temperature gas source method. Prior to experiments, crystal growth simulations were conducted to investigate the influence of vertical gas
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1968cfe69c30bc31e76e99ecca38fff9
https://doi.org/10.4028/www.scientific.net/msf.1004.5
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3
Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth
Autor: Masahiko Ito, Hiroaki Fujibayashi, Hitoshi Osawa, Hidekazu Tsuchida, Masami Naitou, Fukada Keisuke, Takahiro Kozawa, Hideyuki Uehigashi, Isaho Kamata, Kazukuni Hara
Publikováno v: Materials Science Forum. 858:173-176
We have developed a single-wafer vertical epitaxial reactor which realizes high-throughput production of 4H-SiC epitaxial layer (epilayer) with a high growth rate [1,2]. In this paper, in order to evaluate the crystalline defects which can affect the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4c3e27658808cc2fbd5975a08c3143b8
https://doi.org/10.4028/www.scientific.net/msf.858.173
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4
Advances in Fast Epitaxial Growth of 4H-SiC and Defect Reduction
Autor: Fukada Keisuke, Kazukuni Hara, Hideyuki Uehigashi, Hiroaki Fujibayashi, Masahiko Ito, Sugiura Toshikazu, Masami Naitou, Hidekazu Tsuchida, Takahiro Kozawa, Hitoshi Osawa, Isaho Kamata, Tetsuya Miyazawa
Publikováno v: Materials Science Forum. 858:119-124
This paper reports on recent advances in 4H-SiC epitaxial growth toward high-throughput production of high-quality and uniform 150 mm-diameter 4H-SiC epilayers by enhancing of growth rates, improving uniformity and reducing defect densities. A vertic
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::74c4307d875c3c7c1c31f0a9a352cd53
https://doi.org/10.4028/www.scientific.net/msf.858.119
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5
Characterization of Threading Screw Dislocations of Burgers Vectors with A-Components in 4H-SiC
Autor: Okamoto Takeshi, Shoichi Onda, Hideyuki Uehigashi, Hiroyuki Kondo, Hiroyasu Saka
Publikováno v: Materials Science Forum. 858:401-404
We characterized threading screw dislocations to investigate the influence on device performance. The Burgers vectors of the threading screw dislocations (a total of 28dislocations) in 4H-SiC were determined by large-angle convergent-beam electron di
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8deecbe7a22e8b63e0dd347a3c752a06
https://doi.org/10.4028/www.scientific.net/msf.858.401
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7
Threading dislocation with b=c+2a in 4H-SiC as determined by LACBED
Autor: Hiroyuki Kondo, Hiroki Watanabe, Hiroyasu Saka, Shoichi Onda, Hideyuki Uehigashi, Takeshi I. Okamoto
Publikováno v: Philosophical Magazine Letters. 95:489-495
The Burgers vectors of the so-called threading screw dislocations (a total of 28 dislocations) in 4H-SiC were determined by large-angle convergent-beam electron diffraction. A new type of TSD, that is, b = c + 2a dislocation, was identified. Thus, al
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e2be23f0787041b16b3a363524080e03
https://doi.org/10.1080/09500839.2015.1100762
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8
The dissociation modes of threading screw dislocations in 4H-SiC
Autor: Hiroki Watanabe, Hideyuki Uehigashi, Yoshiki Hisada, Hiroyuki Kondo, Shoichi Onda, Kenji Shiraishi, Hiroyasu Saka, Yasuo Kitou
Publikováno v: Philosophical Magazine Letters. 93:591-600
In 4H-SiC, which is currently considered as a most promising candidate for the power devices, four types of threading dislocation (TD) have been identified. Apart from a threading edge dislocation with b = a, it has been shown recently that there are
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::528e4c77636f52bf68ef6676e42117f7
https://doi.org/10.1080/09500839.2013.826395
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9
Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET
Autor: Hiroyasu Saka, Shoichi Onda, Kenji Shiraishi, Hiroyuki Kondo, Norikazu Hosokawa, Yasuo Kito, Yoshiyuki Hisada, Hiroki Watanabe, Hideyuki Uehigashi
Publikováno v: Philosophical Magazine Letters. 93:439-447
Threading dislocations (TD’s) in a 4H-SiC MOSFET were characterized using transmission electron microscopy with special emphasis of their effects on leakage in a p–n junction. Two types of TD’s were identified; a threading near-screw dislocatio
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::309e7c9bc8b27127adf21797ec0d53e2
https://doi.org/10.1080/09500839.2013.798047
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