Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Hideyuki Omura"'
Autor:
Ryo Hayashi, Hisato Yabuta, Hisae Shimizu, Toshiaki Aiba, Amita Goyal, Hideyuki Omura, Naho Itagaki, Katsumi Abe, Masatoshi Watanabe, S. Yaginuma, Hideya Kumomi, Masato Ofuji, Nobuyuki Kaji, Ayumu Sato, Kenji Takahashi, Tomohiro Watanabe, Mikio Shimada, Tatsuya Iwasaki, Yoshinori Tateishi, Masafumi Sano
Publikováno v:
Journal of Display Technology. 5:531-540
This paper presents the following recent investigations of transparent amorphous-oxide semiconductors (TAOS) from materials to devices and circuits. 1) Composition of metals in TAOS are widely explored with the aim of seeking semiconductors suitable
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 84:1-10
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 119:1528-1534
Autor:
Hideyuki Omura, Hideyuki Nasu
Publikováno v:
The Review of Laser Engineering. 27:121-126
For the first time, the effects of coupling efficiency and Fiber Bragg Grating (FBG) reflectivity to characteristicsbetween injection current and optical power of Strained-Layer Multiple Quantum Well (SL MQW) semiconductor lasers coupled to an extern
Autor:
Hideyuki Nasu, Hideyuki Omura
Publikováno v:
The Review of Laser Engineering. 27:51-53
We fabricated Fiber Grating Lasers (FGLs) which consist of a Strained-LayerMultiple-Quantum-Well Semiconductor Optical Amplifier (SL MQW SOA) and an externally distributed Fiber Bragg Grating (FBG) reflector to evaluate its potential for use in Wavel
Autor:
Tomoyuki Koganezawa, Toshiaki Aiba, Taihei Mukaide, Hisato Yabuta, Mikio Shimada, Nobuyuki Kaji, Ichiro Hirosawa, Hideyuki Omura, Hideya Kumomi, Kazuhiro Takada
Publikováno v:
Journal of Physics: Conference Series. 518:012001
We report on microscopic structures and electrical and optical properties of sputter-deposited amorphous indium-gallium-zinc oxide (a-IGZO) films. From electron microscopy observations and an x-ray small angle scattering analysis, it has been confirm
Publikováno v:
Journal of Applied Physics. 105:093712
Materials in In–Ga–Zn–O system are promising candidates for channel layers of high-performance thin-film transistors (TFTs). We investigated the atomic arrangements and the electronic structures of crystalline InGaZnO4 containing point defects
Autor:
Hideo Hosono, Hideyuki Omura, Masahiro Hirano, Tatsuya Iwasaki, Hideya Kumomi, Kenji Nomura, Toshio Kamiya
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44f6fa7c40e0f3ac93cf2fe52f708715
http://www.scopus.com/inward/record.url?eid=2-s2.0-77954264932&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-77954264932&partnerID=MN8TOARS
Conference
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Conference
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