Zobrazeno 1 - 10
of 68
pro vyhledávání: '"Hideyuki Kikuchihara"'
Autor:
Abhishek Kar, Mitiko Miura-Mattausch, Mainak Sengupta, Dondee Navaroo, Hideyuki Kikuchihara, Takahiro Iizuka, Hafizur Rahaman, Hans Jurgen Mattausch
Publikováno v:
IEEE Access, Vol 9, Pp 23786-23794 (2021)
This investigation focuses on a simulation-based power-loss optimization scheme, which is applied to laboratory developed general-purpose inverter-stack circuit, fabricated using high-voltage SiC-MOSFET. The optimization mainly addresses the external
Externí odkaz:
https://doaj.org/article/9fa1ded6b3f2424a90d91d09af186306
Autor:
Fernando Avila Herrera, Yoko Hirano, Takahiro Iizuka, Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Dondee Navarro, Hans Jurgen Mattausch, Akira Ito
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1293-1301 (2019)
A novel compact model has been developed, which considers the origin of the short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus an enlargement of the insight into SCE suppression in advanced thin-layer MOSFET
Externí odkaz:
https://doaj.org/article/1d060eb085884fa4be2db5c018e96eaf
Autor:
Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Tapas Kumar Maiti, Dondee Navarro, Hans Jurgen Mattausch
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1056-1063 (2018)
Requirements for compact modeling to predict circuit power loss accurately are the focus of this investigation. Most important is the capturing of the differences between an ideal carrier reaction within the used devices and the reality during circui
Externí odkaz:
https://doaj.org/article/5ca6c69e45f64e1aaab05129f2b6000e
Autor:
Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Abhishek Kar, Mainak Sengupta, Takahiro Iizuka, Hans Jurgen Mattausch, Hafizur Rahaman, Dondee Navaroo
Publikováno v:
IEEE Access, Vol 9, Pp 23786-23794 (2021)
This investigation focuses on a simulation-based power-loss optimization scheme, which is applied to laboratory developed general-purpose inverter-stack circuit, fabricated using high-voltage SiC-MOSFET. The optimization mainly addresses the external
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adcc12300931b7f06c3428d2ddc2559a
https://doi.org/10.1109/access.2021.3056467
https://doi.org/10.1109/access.2021.3056467
Autor:
F. Avila Herrera, Hideyuki Kikuchihara, Akira Ito, Y. Hirano, Takahiro Iizuka, Hans Juergen Mattausch, M. Miura-Mattausch
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1381-1389 (2020)
A compact multi-gate MOSFET model is developed for high-voltage applications. The model includes the short-channel effects specific for thin-film MOSFETs with highly resistive drain contact. The short-channel effects are drastically reduced by the dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53beb53c0fcb48019811dc3182639c05
https://doi.org/10.1109/jeds.2020.3032604
https://doi.org/10.1109/jeds.2020.3032604
Autor:
Dondee Navarro, Takao Yamamoto, Takahiro Iizuka, Takuya Umeda, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Hans Jurgen Mattausch
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
High voltage MOSFETs are widely used for bias ranges of a few dozens of volts to a few hundred of volts. The trench-type MOSFET is one of the key devices for realizing this wide range applications. However, the device characteristics are not yet well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9e7f79f5a82b6018f853d676d8d33c0
https://doi.org/10.1109/sispad54002.2021.9592591
https://doi.org/10.1109/sispad54002.2021.9592591
Autor:
F. Avila Herrera, Y. Hirano, Hans Juergen Mattausch, Takahiro Iizuka, Akira Ito, Hideyuki Kikuchihara, M. Miura-Mattausch
Publikováno v:
IEEE Transactions on Electron Devices. 66:3726-3733
Silicon-thickness scaling has been used as the main parameter for short-channel-effect (SCE) reduction. Nevertheless, SCEs are still present in advanced thin-layer MOSFETs. Here, for enlarging the insight into SCE suppression, a new compact model is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::540c7022423adb2a9c1b19413635e3da
https://doi.org/10.1109/ted.2019.2931749
https://doi.org/10.1109/ted.2019.2931749
Autor:
Hideyuki Kikuchihara, Yosuke Miyaoku, Hans Juergen Mattausch, U. Feldmann, A. Tone, M. Miura-Mattausch, Takashi Saito, Takao Yamamoto, Takeshi Mizoguchi
Publikováno v:
IEEE Transactions on Electron Devices. 66:3265-3272
The second generation of the compact HiSIM_IGBT model for circuit simulation is reported. HiSIM_IGBT2 is developed on the basis of an adapted version of the high-voltage mosfet model HiSIM_HV and solves the Poisson equation along the complete device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c91d6bd43fbdcb318aeb3778f06f8f
https://doi.org/10.1109/ted.2019.2919799
https://doi.org/10.1109/ted.2019.2919799
Autor:
Dondee Navarro, Mitiko Miura-Mattausch, Hans Jurgen Mattausch, Takahiro Iizuka, Hafizur Rahaman, Arnab Mukhopadhyay, T. K. Maiti, Sandip Bhattacharya, Hideyuki Kikuchihara, Sadayuki Yoshitomi
Publikováno v:
IEICE Transactions on Electronics. :487-494
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83de4c50e6e1f30d38646888b0441ad3
https://doi.org/10.1587/transele.2018ecp5046
https://doi.org/10.1587/transele.2018ecp5046
Autor:
Yuta Tanimoto, Hans Juergen Mattausch, Toshiyuki Naka, Yasuhiro Okada, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Wataru Saito, Takeshi Mizoguchi
Publikováno v:
IEEE Transactions on Electron Devices. 66:106-115
The compact model of HIroshima-University Starc Igfet Model (HiSIM)_GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a similar way as the industry-standard compact HiSIM models for other semiconductor devices. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ab607c948bef135ae102cd4f8bb789d
https://doi.org/10.1109/ted.2018.2868284
https://doi.org/10.1109/ted.2018.2868284