Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hideyasu Une"'
Autor:
Kohei Tanaka, Sei Umisedo, Hideyasu Une, Sami K. Hahto, Yusuke Kuwata, Karuppanan Sekar, Yoshiki Nakashima, Masayoshi Hino, Hirofumi Asai, Thormas N. Horsky, Tetsuya Igo, Tetsuro Yamamoto, Nariaki Hamamoto
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
A new high current Ion implanter "LUXiON" has been developed. Superior high beam current and high beam controllability are achieved by a novel beam transportation system, which extracts a high current long ion beam from an ion source, then transports
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd6c6f47f310179b38b38a42ac4ae485
https://doi.org/10.1109/iit.2016.7882876
https://doi.org/10.1109/iit.2016.7882876
Autor:
Masayasu Tanjyo, Nobuo Nagai, Yuji Koga, Sei Umisedo, Tsutomu Nagayama, T. Matsumoto, Nariaki Hamamoto, Noriaki Maehara, John Borland, Hideyasu Une
Publikováno v:
ECS Transactions. 18:1059-1064
Newly developed sweep beam Cluster ion implanter: CLARIS with 0.2-7keV energy range for Boron beam and 1-10keV energy range for Carbon beam is introduced. Novel Cluster ion implantation technology is capable for 45nm beyond device requiring USJ forma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::893b5a5096a248e2bc6972d0690215ed
https://doi.org/10.1149/1.3096572
https://doi.org/10.1149/1.3096572
Publikováno v:
AIP Conference Proceedings.
Some plasma processes such as etching produce non-uniform electrical characteristics during device fabrication at the front-end manufacturing process. This variation in electrical properties causes the yield of transistors to decrease. In the front-e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3fe5c6337bc6f8dd02ab8628e315e43
https://doi.org/10.1063/1.4766548
https://doi.org/10.1063/1.4766548
Autor:
T. N. Horsky, Yoshikazu Hashino, Sei Umisedo, Hiroshi Onoda, Yuji Koga, Yasunori Kawamura, Masahiro Hashimoto, Sami K. Hahto, Nariaki Hamamoto, Tsutomu Nagayama, Dale C. Jacobson, Noriaki Maehara, Masayasu Tanjyo, Yoshiki Nakashima, Nobuo Nagai, Hideyasu Une
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
The cluster ion beam implanter named CLARIS has been developed for beyond 45nm device production use, which is characterized by the high productivity, high effective low energy high current, and preciseness of incident beam angle and dose uniformity.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2855b58039f66de28290b1f4ffb3d152
https://doi.org/10.1109/iwjt.2010.5474977
https://doi.org/10.1109/iwjt.2010.5474977