Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hidetoshi Washio"'
Autor:
Hidetoshi Washio, Taishi Sumita, Kohsuke Ueda, Hiroshi Yamaguchi, Tatsuya Takamoto, Hiroyuki Juso, Mitsuru Imaizumi, Tetsuya Nakamura
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
InGaP/GaAs/InGaAs inverted metamorphic triple junction (IMM-3J) solar cells fabricated by epitaxial layer transfer process onto film -have features of lightweight and flexible. The average efficiencies of 27.4cm2 cells developed for space and terrest
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::499cf22ea5b2409e0e9aeca61418e855
https://doi.org/10.1109/pvsc.2017.8366097
https://doi.org/10.1109/pvsc.2017.8366097
Autor:
Suzuki Yoshiyuki, Sachiyo Ooka, Takeshi Ohshima, Tatsuya Takamoto, Kazunori Shimazaki, Ryo Ijichi, Kazuyo Nakamura, Hiroshi Yamaguchi, Taishi Sumita, Naoki Takahashi, Hidetoshi Washio, Tetsuya Nakamura, Keiji Shimada, Mitsuru Imaizumi
Publikováno v:
2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
The Space Solar Sheet of two configuration types using InGaP/GaAs/InGaAs triple junction solar cells has been developed. Two types of shielding material are utilized for the Space Solar Sheet. One type uses transparent resin films (Film type), and th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec19ec0ef8d429500fb3683b1e2be3b7
https://doi.org/10.1109/pvsc.2015.7356138
https://doi.org/10.1109/pvsc.2015.7356138
Autor:
Masato Hagino, Tatsuo Saga, Hidetoshi Washio, M. Kaneiwa, Sumio Matsuda, Yoshifumi Tonomura, Kazuhiro Aoyama, Koichi Shinozaki, Osamu Anzawa
Publikováno v:
Solar Energy Materials and Solar Cells. 66:551-558
This paper reports the recent results of improving the radiation hardness of silicon solar cells, which is SHARP and NASDA's project since 1998 (Tonomura et al., Second World Conference on Photovoltaic Solar Energy, 1998, pp. 3511–3514). Newly deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77ceeae5fba9c03976ac5dd8a7110f44
https://doi.org/10.1016/s0927-0248(00)00237-3
https://doi.org/10.1016/s0927-0248(00)00237-3
Autor:
T. Matsutani, Tadashi Hisamatsu, Hidetoshi Washio, Yoshifumi Tonomura, Sumio Matsuda, A. Suzuki, Y. Yamamoto, Tatsuo Saga, T. Katsu
Publikováno v:
Solar Energy Materials and Solar Cells. 35:105-111
Thin silicon solar cells with a Non-Reflective front Surface (NRS), a passivated rear surface and locally diffused BSF structure have been considered to be hopeful candidates as space solar cells of the next generation. In this paper, the electrical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::deb50d2366ceb12303dc6c23fe9c2b07
https://doi.org/10.1016/0927-0248(94)90129-5
https://doi.org/10.1016/0927-0248(94)90129-5
Autor:
Hiroshi Yamaguchi, Kazuaki Sasaki, Masato Takahashi, Katsuya Nakaido, Kazuyo Nakamora, Hidetoshi Washio, Hiroyuki Juso, Tatsuya Takamoto, Tomoya Kodama, Takaaki Agui, Mitsuru Imaizumi, Atsushi Yoshida
Publikováno v:
2010 35th IEEE Photovoltaic Specialists Conference.
A world record-setting efficiency of 35.8% at AM1.5G (x1) has been demonstrated by an InGaP (1.88 eV)/GaAs/InGaAs (0.97 eV) triple-junction solar cell fabricated using the inverted layer transfer process. Lattice-matched top and middle cells are grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfeebaf85c2a6520df06a010e3ab84ed
https://doi.org/10.1109/pvsc.2010.5616778
https://doi.org/10.1109/pvsc.2010.5616778
Autor:
Naoki Takahashi, Ryo Izichi, Mitsuru Imaizumi, Tomoya Kodama, Kazunori Shimazaki, Hiroshi Yamaguchi, Hidetoshi Washio, Masato Takahashi, Koichi Kibe, Kazuyo Nakamura, Tatsuya Takamoto
Publikováno v:
2008 33rd IEEE Photovolatic Specialists Conference.
The prototype solar sheet using the paper-like thin film InGaP/GaAs solar cells and thin bypass diodes we newly developed was fabricated. The output power of the prototype solar sheet is 11.3W (Voc=11.88V, Isc=1.12A, F.F.=0.854), and the weight is ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb6149c55ce4172c49a95139cb8106c
https://doi.org/10.1109/pvsc.2008.4922715
https://doi.org/10.1109/pvsc.2008.4922715
Autor:
Hiroshi Yamaguchi, Naoki Takahashi, M. Kaneiwa, Kazuyo Nakamura, Hidetoshi Washio, Kohji Okamoto, Koichi Kibe, Tomoya Kodama, Tadashi Hisamatsu, Takaaki Agui, Tatsuya Takamoto, Mitsuru Imaizumi
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
An efficient, flexible and lightweight thin-film InGaP/GaAs solar cell has been developed. We discovered a reduction in open-circuit voltage (Voc) of the thin-film InGaP/GaAs cell due to the non-ohmic characteristics in the interface between the meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::852a1a8671d0de4fdac9fc548ef98168
https://doi.org/10.1109/wcpec.2006.279842
https://doi.org/10.1109/wcpec.2006.279842
Autor:
Koichi Kibe, Mitsuru Imaizumi, Naoki Takahashi, M. Kaneiwa, Hidetoshi Washio, Tatsuya Takamoto, Tadashi Hisamatsu, Tomoya Kodama, Takaaki Agui, Hiroshi Yamaguchi, Kohji Okamoto
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
A paper-thin, lightweight InGaP/ GaAs solar cell with high efficiency and flexibility has been developed. A high-efficiency thin-film cell can be obtained for cell fabrication both before and after removing the substrate. Introducing a tunnel junctio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4610403036f0a15335aa775d1fc82cf
https://doi.org/10.1109/wcpec.2006.279833
https://doi.org/10.1109/wcpec.2006.279833
Autor:
Kohji Okamoto, Takaaki Agui, Naoki Takahashi, M. Kaneiwa, Kazuyo Nakamura, Hidetoshi Washio, K. Kamimura, O. Anzawa, Masafumi Yamaguchi, Tatsuya Takamoto
Publikováno v:
Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005..
Although technologies for the InGaP/InGaAs/Ge cell have been matured, there is still room for improvement of the InGaP/(In)GaAs/Ge cell in practical level. Band gap of the top cell should be increased a little to get higher V/sub OC/. Thinning the Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a352bf8fa269774826f6c02f4a158ab1
https://doi.org/10.1109/pvsc.2005.1488184
https://doi.org/10.1109/pvsc.2005.1488184
Autor:
A. Suzuki, Hidetoshi Washio, Tadashi Hisamatsu, T. Matsutani, Y. Yamamoto, Yoshifumi Tonomura, Tatsuo Saga, S. Matsuda, T. Katsu
Publikováno v:
Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).
The improvement of the efficiencies of thin silicon solar cells for space use was studied. The representative 3 types of nonreflective surface structures were evaluated and their characteristics were clarified. Solar cells with these structures showe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9acfdaa682fc55f5c0aaf488ff258c6e
https://doi.org/10.1109/pvsc.1993.346922
https://doi.org/10.1109/pvsc.1993.346922