Výsledky vyhledávání - "Hidetoshi TAKEDA"

Akademický článek

Fatigue properties and damage mechanism of modified PC based GFRP

Autor: Makoto ANDO, Kyosuke SATO, Yoshihito KUROSHIMA, Nao-Aki NODA, Hidetoshi TAKEDA

Publikováno v: Nihon Kikai Gakkai ronbunshu, Vol 80, Iss 815, Pp SMM0185-SMM0185 (2014)

In this study, for the matrix / fiber interface strength is investigated in the fatigue experiment for the glass-fiber reinforcing polycarbonate (GFPC). Here the effect of modified PC resin is discussed when Epoxy (EP) or Polydimethylsiloxane (PDMS)

Externí odkaz: https://doaj.org/article/050b9e8aff3546318b71a305448d4ff2

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Akademický článek

Impact properties of polydimethylsiloxane copolymerized polycarbonate and application of the time-temperature superposition principle

Autor: Makoto ANDO, Nao-Aki NODA, Yoshihito KUROSHIMA, Yasuhiro ISHIKAWA, Hidetoshi TAKEDA

Publikováno v: Nihon Kikai Gakkai ronbunshu, Vol 80, Iss 814, Pp SMM0149-SMM0149 (2014)

In this study, high-speed tensile testing for notched specimen is conducted to investigate the impact property of Polydimethylsiloxane copolymerized Polycarbonate (PDMS-PC) compared with Polycarbonate (PC). Depending on the test temperature and tensi

Externí odkaz: https://doaj.org/article/8e99509c19cb43d4930673fd69bac9c6

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Next Generation CMP Process Technique for Hard-to-Process Single Crystals

Autor: Hideo AIDA, Hidetoshi TAKEDA, Tadakazu MIYASHITA, Atsushi KAJIKURA, Toshiro DOI

Publikováno v: Journal of the Japan Society for Precision Engineering. 88:435-439

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae1bf43da3eb2690086d9c016df4eb5b
https://doi.org/10.2493/jjspe.88.435

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Akademický článek

Changing from NAFLD to MASLD: Cumulative incidence of gallstones between patients with NAFLD and those with MASLD in Asia

Autor: Shuhei Fukunaga, Tomoyuki Nakane, Michita Mukasa, Hidetoshi Takedatsu, Takumi Kawaguchi

Publikováno v: Clinical and Molecular Hepatology, Vol 30, Iss 4, Pp 959-961 (2024)

Externí odkaz: https://doaj.org/article/d4fe47c4945444ecb939ea3263b235db

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Analysis of mechanically induced subsurface damage and its removal by chemical mechanical polishing for gallium nitride substrate

Autor: Hideo Aida, Toshiro Doi, Hidetoshi Takeda

Publikováno v: Precision Engineering. 67:350-358

A quantitative analysis of the surface and subsurface damage to gallium nitride (GaN) substrate from precise mechanical polishing with diamond abrasives and characterizations of their removal by the chemical mechanical polishing (CMP) process with co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae1f1b8e4c320ca25c4d923ad03e089f
https://doi.org/10.1016/j.precisioneng.2020.10.007

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Chemical Mechanical Polishing of MgO Substrate and Its Effect on Fabrication of Atomic Step-Terrace Structures on MgO Surface by Subsequent High-Temperature Annealing

Autor: Hideo Aida, Takumi Ojima, Ryuji Oshima, Takahiro Ihara, Hidetoshi Takeda, Yutaka Kimura, Atsuhito Sawabe

Publikováno v: ECS Journal of Solid State Science and Technology. 11:114005

Single-crystalline MgO is used as a substrate for the deposition of various functional thin films. The present study focused on the development of a complete sequence of fabricating atomic step-terrace structures on the MgO substrate via a method tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d81db01be193be4df113951ae2f9295e
https://doi.org/10.1149/2162-8777/aca3d1

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Linear dependence of dislocation pattern size on the imprint width and scratch width on (0001) GaN

Autor: Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao, Hidetoshi Takeda, Hideo Aida, Kazuyuki Tadatomo

Publikováno v: Journal of Physics D: Applied Physics. 55:485304

With the aim of developing a method of estimating the thickness of an affected layer on a wide-bandgap semiconductor wafer caused by scratching, we investigated the dependence of dislocation pattern size on the width of the imprint (or scratch) induc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1f3d907a476599e442e6ccca2563e447
https://doi.org/10.1088/1361-6463/ac96fd

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Size of dislocation patterns induced by Vickers indentation in hydride vapor-phase epitaxy GaN

Autor: Yukari Ishikawa, Yoshihiro Sugawara, Yongzhao Yao, Hidetoshi Takeda, Hideo Aida, Kazuyuki Tadatomo

Publikováno v: Journal of Applied Physics. 131:225303

3D dislocation structures induced by Vickers indentation depending on the imprint size are precisely investigated using an alternation of cathodoluminescence and chemical mechanical polishing (CMP), multiphoton excitation photoluminescence, and (scan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::888d364cc2f63519827100bb026c5f03
https://doi.org/10.1063/5.0084495

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