Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Hidetoshi Nishi"'
Autor:
Jernej Rudi Finžgar, Martin J. A. Schuetz, J. Kyle Brubaker, Hidetoshi Nishimori, Helmut G. Katzgraber
Publikováno v:
Physical Review Research, Vol 6, Iss 2, p 023063 (2024)
We propose and analyze the use of Bayesian optimization techniques to design quantum annealing schedules with minimal user and resource requirements. We showcase our scheme with results for two paradigmatic spin models. We find that Bayesian optimiza
Externí odkaz:
https://doaj.org/article/f2b613213af74958b0efaef4910948e2
Publikováno v:
60 Excellent Inventions in Metal Forming ISBN: 9783662463116
The rolled strip shape is one of important factors in determining the quality of rolled products. The improved strip shape increases not only productivity but also product quality. Thus, it was desired to develop a new type of mill which is capable o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38e4a6235d7a307a18077cc4bd50a59d
https://doi.org/10.1007/978-3-662-46312-3_37
https://doi.org/10.1007/978-3-662-46312-3_37
Publikováno v:
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC).
GaAs MESFET LSI design using E/D-DCFL (enhancement/depletion-directly coupled FET logic) circuits is considered. Monte Carlo DC SPICE simulation is used to assess the effect of the FET parameter spread on the functional yield of a chip. It is found t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad411f07c83eb407827d52c15e9e7b7c
https://doi.org/10.1109/gaas.1990.175491
https://doi.org/10.1109/gaas.1990.175491
Autor:
Hidetoshi Nishi
Publikováno v:
Journal of the Society of Mechanical Engineers. 108:476-477
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d35bdad8c74cd7e855e926757834f0b0
https://doi.org/10.1299/jsmemag.108.1039_476
https://doi.org/10.1299/jsmemag.108.1039_476
Autor:
Kabuki Takada, Shigetoshi Sota, Seiji Yunoki, Bibek Pokharel, Hidetoshi Nishimori, Daniel A. Lidar
Publikováno v:
Physical Review Research, Vol 3, Iss 4, p 043013 (2021)
The role of nonstoquasticity in the field of quantum annealing and adiabatic quantum computing is an actively debated topic. We study a strongly-frustrated quasi-one-dimensional quantum Ising model on a two-leg ladder to elucidate how a first-order p
Externí odkaz:
https://doaj.org/article/280b2b28247e4ff39cb5f6bade2a7dbc
Autor:
Luise Prielinger, Andreas Hartmann, Yu Yamashiro, Kohji Nishimura, Wolfgang Lechner, Hidetoshi Nishimori
Publikováno v:
Physical Review Research, Vol 3, Iss 1, p 013227 (2021)
We introduce a two-parameter approximate counter-diabatic term into the Hamiltonian of the transverse-field Ising model for quantum annealing to accelerate convergence to the solution, generalizing an existing single-parameter approach. The protocol
Externí odkaz:
https://doaj.org/article/2e42d99e97c4486789169e12b975d8ad
Autor:
Yuki Bando, Yuki Susa, Hiroki Oshiyama, Naokazu Shibata, Masayuki Ohzeki, Fernando Javier Gómez-Ruiz, Daniel A. Lidar, Sei Suzuki, Adolfo del Campo, Hidetoshi Nishimori
Publikováno v:
Physical Review Research, Vol 2, Iss 3, p 033369 (2020)
The number of topological defects created in a system driven through a quantum phase transition exhibits a power-law scaling with the driving time. This universal scaling law is the key prediction of the Kibble-Zurek mechanism (KZM), and testing it u
Externí odkaz:
https://doaj.org/article/5bc2e71e937243b4b18cf924e82141ee
Publikováno v:
Journal of Applied Physics. 49:608-613
This paper describes an apparatus designed to obtain spatial uniformity of channeled‐ion implantation using a parallel‐scanning system. Descriptions of the special sample holder which can be tilted in two directions and a detecting scheme for cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1c2a1e36bd7255bce461beb2b71b139
https://doi.org/10.1063/1.324687
https://doi.org/10.1063/1.324687
Publikováno v:
IEEE Transactions on Electron Devices. 36:1586-1590
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1049cfaa0c1103a3caa7e890b81c039d
https://doi.org/10.1109/16.34216
https://doi.org/10.1109/16.34216
Publikováno v:
IEEE Transactions on Electron Devices. 32:2314-2318
This paper describes the possibility of improving the performance of GaAs MESFET's by using piezoelectric effects. It is shown that piezoelectric charges, induced in the FET channel region due to the stressed dielectric overlayer, can be used to comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07bdbab87e44347b177e42b6c2b49513
https://doi.org/10.1109/t-ed.1985.22276
https://doi.org/10.1109/t-ed.1985.22276