Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Hidetoshi Koyama"'
Autor:
Tatsuro Watahiki, Hidetoshi Koyama, Takuma Nanjo, Imai Akifumi, T. Imazawa, Yoshitsugu Yamamoto, Naruhisa Miura, A. Kiyoi, Tetsuro Hayashida
Publikováno v:
Electronics Letters, Vol 57, Iss 17, Pp 670-671 (2021)
SiO2 film deposition and subsequent high‐temperature annealing resulted in the generation of a two‐dimensional electron gas (2DEG) at Al(Ga)N/GaN hetero‐interfaces, of which the 2DEG was originally fully depleted. The obtained mobilities and sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45301703e742f18253b0a44b4ef082bf
https://doaj.org/article/2caa1d42cf174e1bbe01e615472d5c46
https://doaj.org/article/2caa1d42cf174e1bbe01e615472d5c46
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBD09
The effects of post-annealing processes for normally-off GaN metal-oxide semiconductor heterojunction field-effect transistors (MOS-HFETs) with a thin AlN barrier layer are investigated. These annealing processes are post-deposition annealing (PDA) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab9de0c80ae4cdc0bce37c9edfdf02b5
https://doi.org/10.7567/1347-4065/aafb5f
https://doi.org/10.7567/1347-4065/aafb5f
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b58cef3d3129a655da5ce1216f64c7b
https://doi.org/10.7567/ssdm.2016.n-6-04l
https://doi.org/10.7567/ssdm.2016.n-6-04l
Autor:
Atsuo Sugimoto, Hiroshi Fukumoto, Shuichi Sakata, Yoshitaka Kamo, Christer M. Andersson, Koji Yamanaka, Hidetoshi Koyama, Eigo Kuwata
Publikováno v:
2015 European Microwave Conference (EuMC).
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Circuit (MMIC) high power amplifier (HPA), which features high efficiency and high power over C-Ku band with 115 % relative bandwidth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f8c6cb680005ae3bf70aa008d440b0d
https://doi.org/10.1109/eumc.2015.7346009
https://doi.org/10.1109/eumc.2015.7346009
Autor:
Naohito Takita, Makoto Hata, Naoki Igarashi, Teruo Kakegawa, Michihiro Orihata, Hidetoshi Koyama, Yoshikazu Hashimoto, Gensyu Tate, Minoru Moriwaki
Publikováno v:
Nihon Rinsho Geka Gakkai Zasshi (Journal of Japan Surgical Association). 63:387-391
症例は78歳,女性.検診で便潜血反応陽性と貧血を指摘され近医を受診,上部消化管造影検査で十二指腸球部に巨大なポリープを認め当院紹介受診となった.上部消化管内視鏡検査と腹部CT検
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e6059117bb2db5d81ffea0067c6b05a
https://doi.org/10.3919/jjsa.63.387
https://doi.org/10.3919/jjsa.63.387
Autor:
Hidetoshi Koyama, Kunihiro Sato, Yoshihito Hirano, K. Kanaya, Kosaku Tsujioka, Motoyoshi Koyanagi, Akira Inoue, Akira Ohta
Publikováno v:
2014 IEEE MTT-S International Microwave Symposium (IMS2014).
This report describes a Ku-band amplifier GaN MMIC. The amplifier MMIC delivers a measured saturated power of 20 W and gain of 20 dB under CW operation. To enhance the linearity of the two stage amplifier composed of the MMIC and GaN Internally Match
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95f595c50edc4c47d1d4e179ecc3d6b4
https://doi.org/10.1109/mwsym.2014.6848427
https://doi.org/10.1109/mwsym.2014.6848427
Publikováno v:
Solid-State Electronics. 42:921-924
NH 3 -nitrided oxide has been annealed in NO or O 2 gas at 1000°C for 1 min and the electrical characteristics, charge trapping and time-dependent dielectric breakdown (TDDB) have been studied. It was observed that in the F–N region before stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb6a0bafacba2872bd922e9c1679d26
https://doi.org/10.1016/s0038-1101(98)00108-7
https://doi.org/10.1016/s0038-1101(98)00108-7
Publikováno v:
Microelectronics Reliability. 37:1521-1524
Wet oxide thicknesses dependence of nitridation effects on electrical characteristics, charge trapping properties and TDDB (Time Dependent Dielectric Breakdown) characteristics have been investigated. It is found that the difference of conduction cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1424eb071b99c11fd448d534a41aaaf1
https://doi.org/10.1016/s0026-2714(97)00099-1
https://doi.org/10.1016/s0026-2714(97)00099-1
Autor:
Yoji Mashiko, Junichi Mitsuhashi, Tamotsu Ogata, Motaharul Kabir Mazumder, Kiyoteru Kobayashi, Hidetoshi Koyama
Publikováno v:
Journal of The Electrochemical Society. 143:368-373
Metal oxide semiconductor capacitors with oxidized thick and thin nitride films of two different nitride thicknesses were used to study the conduction and charge-trapping behavior under positive stress bias to the upper electrode. Although the top ox
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31498616b68d6d15b5b696029431077f
https://doi.org/10.1149/1.1836439
https://doi.org/10.1149/1.1836439
Publikováno v:
Journal of The Electrochemical Society. 142:3956-3961
For Si epitaxial growth on Si(111) with dichlorosilane (SiH 2 Cl 2 ), the kinetics of nucleation and growth of pyramidal hillock (PH) has been investigated by measuring the variations of size and density of PH as a function of growth temperature, SiH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7cdbe96564578aaad3b4826c828e16d
https://doi.org/10.1149/1.2048441
https://doi.org/10.1149/1.2048441