Zobrazeno 1 - 10
of 85
pro vyhledávání: '"Hidetoshi Iwamura"'
Publikováno v:
Journal of Crystal Growth. 188:307-310
The structural dependence of optical bistability was studied for the In0.52Al0.48As/InP type II multiple quantum well diodes grown by gas source molecular beam epitaxy. Two types of optical bistability were observed. One of them shows a sudden increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e7c61d0c801fb88fbdf0dc98ff6b3bd
https://doi.org/10.1016/s0022-0248(98)00070-0
https://doi.org/10.1016/s0022-0248(98)00070-0
Publikováno v:
Applied Surface Science. :904-908
Temperature and excitation power dependence of the below-gap emission from type II heterointerface was studied for InAlAs/InP type II heterostructures grown on (111)B and (100) InP substrates. It was found that below 30 K, the photoluminescence (PL)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa0fbe5251769707a4d2d84e49c8ebe6
https://doi.org/10.1016/s0169-4332(98)00174-3
https://doi.org/10.1016/s0169-4332(98)00174-3
Autor:
Yukihide Hakone, K. Yoshimatsu, Naohisa Inoue, Yuichi Kawamura, Hidetoshi Iwamura, Taichiro Ito
Publikováno v:
Applied Surface Science. :725-728
Bistable behavior of electroluminescence (EL) was studied for the InAlAs/InP type II MQW diodes grown by gas source molecular beam epitaxy. The bistability of the current-light output ( I-L ) characteristic is clearly observed at 80 K, and it exactly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19bcbfcf1ff3dee24be1635d1caf2790
https://doi.org/10.1016/s0169-4332(97)80172-9
https://doi.org/10.1016/s0169-4332(97)80172-9
Publikováno v:
IEEE Journal of Quantum Electronics. 32:873-883
We have simulated the static and dynamic characteristics of voltage-controlled multiple-quantum-well (MQW) bistable laser diodes. To investigate the time response of the saturable absorber under applied electric field, we performed pump-probe measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b549a6ec5692f3778a8d52ed00f534c
https://doi.org/10.1109/3.493013
https://doi.org/10.1109/3.493013
Publikováno v:
IEEE Journal of Quantum Electronics. 32:1922-1931
A model of the polarization-dependent refractive-index change that accompanies superlattice disordering is proposed for the first time. Calculated results agree well with experimental results in terms of the amount and direction of the refractive-ind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c76cd2cdf14ae9d89ca640c52f4135
https://doi.org/10.1109/3.541678
https://doi.org/10.1109/3.541678
Autor:
Hidetoshi Iwamura, Yuichi Kawamura
Publikováno v:
Journal of Crystal Growth. 150:597-601
In 1− x Ga x As 1− y P y /In 0.52 Al 0.48 As multiple quantum well (MQW) structures have been grown on InP substrates by gas source molecular beam epitaxy and the compositional dependence of the optical properties are studied by photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b32f58a079b90187b95d671fe9b8814c
https://doi.org/10.1016/0022-0248(95)80279-l
https://doi.org/10.1016/0022-0248(95)80279-l
Publikováno v:
IEEE Journal of Quantum Electronics. 31:2142-2147
We have investigated static and dynamic characteristics of a multiple-quantum-well (MQW) voltage-controlled bistable laser diode at 1.5 /spl mu/m. Using the quantum confined Stark effect, the absorption coefficient and the absorption band edge of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9e0323f0d84f510519ed5df8a80f181
https://doi.org/10.1109/3.477739
https://doi.org/10.1109/3.477739
Publikováno v:
Journal of Applied Physics. 76:5916-5920
The optical properties of an AlInAs/InP type‐II superlattice are studied at room temperature. The photocurrent spectra have peaks that are attributable to excitons. An electroabsorption experiment confirms that the peaks are enhanced by applying an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e44c277f29d556e04b24f437295c669d
https://doi.org/10.1063/1.358414
https://doi.org/10.1063/1.358414
Publikováno v:
IEEE Journal of Quantum Electronics. 30:1794-1800
The operating principle of our polarization mode splitter is based on the polarization-dependent refractive index changes induced by disordering InGaAs/InP superlattices. We disordered superlattices by the Si/sub 3/N/sub 4/ cap-annealing method and m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f1c385d01649588e293c4701f6c1f4ca
https://doi.org/10.1109/3.301644
https://doi.org/10.1109/3.301644
Publikováno v:
IEEE Journal of Quantum Electronics. 29:1387-1392
The authors reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9022292698f10ac9783b0dca10406832
https://doi.org/10.1109/3.236152
https://doi.org/10.1109/3.236152