Výsledky vyhledávání - "Hideto MIYAKE"

Akademický článek

230 nm wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs

Autor: Kenjiro Uesugi, Ryota Akaike, Shuhei Ichikawa, Takao Nakamura, Kazunobu Kojima, Masahiko Tsuchiya, Hideto Miyake

Publikováno v: Applied Physics Express, Vol 17, Iss 4, p 042008 (2024)

Reducing the average Al composition of Al _x Ga _1− _x N/Al _y Ga _1− _y N multiple quantum wells (MQWs) is an effective approach to increase the current injection efficiencies of far-UV-C LEDs (far-UVC LEDs). A reduction can be realized by decre

Externí odkaz: https://doaj.org/article/620cd27b39d44408a6f4d90dee07c5d5

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Akademický článek

Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates

Autor: Satoshi Kurai, Megumi Fujii, Yuta Ohnishi, Ryota Oshimura, Kosuke Inai, Kunio Himeno, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada

Publikováno v: AIP Advances, Vol 13, Iss 4, Pp 045319-045319-7 (2023)

The correlation between the internal quantum efficiency (IQE) and the effective diffusion length estimated by the cathodoluminescence intensity line profile near the dark spots, including the effect of non-radiative recombination due to point defects

Externí odkaz: https://doaj.org/article/52d9041251e945a68c1a4adabe8c2b74

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Akademický článek

Transcriptome analysis of molecular response to UVC irradiation in zebrafish embryos

Autor: Liqing Zang, Yasuhito Shimada, Hideto Miyake, Norihiro Nishimura

Publikováno v: Ecotoxicology and Environmental Safety, Vol 231, Iss , Pp 113211- (2022)

Ultraviolet (UV) rays can be both harmful and beneficial to humans. This study aimed to investigate the toxicity and safety of ultraviolet C (UVC) exposure in living organisms and the corresponding biodefense molecular mechanisms. Zebrafish embryos,

Externí odkaz: https://doaj.org/article/ed91d57ec70f4b8f978ed46dc785706b

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Akademický článek

Thermal strain analysis considering in-plane anisotropy for sputtered AlN on c- and a-plane sapphire under high-temperature annealing

Autor: Yusuke Hayashi, Kenjiro Uesugi, Kanako Shojiki, Tetsuya Tohei, Akira Sakai, Hideto Miyake

Publikováno v: AIP Advances, Vol 11, Iss 9, Pp 095012-095012-10 (2021)

High-temperature annealing of sputtered AlN (Sp-AlN) using a face-to-face configuration is a novel technique that has attracted considerable attention because it can reduce the threading dislocation density of Sp-AlN to 107 cm−2. However, drawbacks

Externí odkaz: https://doaj.org/article/c0a76976cf0943ddaf31357c14749567

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Akademický článek

Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells

Autor: Kanako Shojiki, Ryota Ishii, Kenjiro Uesugi, Mitsuru Funato, Yoichi Kawakami, Hideto Miyake

Publikováno v: AIP Advances, Vol 9, Iss 12, Pp 125342-125342-9 (2019)

The impact of a face-to-face annealed sputtered AlN/sapphire (FFA Sp-AlN) template with threading-dislocation densities (TDDs) of 2 × 108 cm−2 and an n-type AlGaN (n-AlGaN) underlayer on optical properties of AlGaN multiple quantum wells (MQWs) wi

Externí odkaz: https://doaj.org/article/ea229a84afd549aa8716a2d1fb22b39c

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Akademický článek

Growth of Si-doped AlN on sapphire (0001) via pulsed sputtering

Autor: Yuya Sakurai, Kohei Ueno, Atsushi Kobayashi, Jitsuo Ohta, Hideto Miyake, Hiroshi Fujioka

Publikováno v: APL Materials, Vol 6, Iss 11, Pp 111103-111103-6 (2018)

The Si-doped AlN films were grown on sapphire (0001) by pulsed sputtering deposition (PSD), and their structural and electrical properties were investigated. A combination of PSD and high-temperature annealing process enabled the growth of high-quali

Externí odkaz: https://doaj.org/article/c7dfa1fb12d9430092c85e77c351d936

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Akademický článek

High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes

Autor: Chia-Yen Huang, Pei-Yu Wu, Kai-Shiang Chang, Yun-Hsiang Lin, Wei-Chih Peng, Yem-Yeu Chang, Jui-Ping Li, Hung-Wei Yen, YewChung Sermon Wu, Hideto Miyake, Hao-Chung Kuo

Publikováno v: AIP Advances, Vol 7, Iss 5, Pp 055110-055110-6 (2017)

A high-quality and highly-transparent AlN template was prepared by regrowth on a sputter-deposited AlN buffer layer. The buffer layer was thermally annealed and then underwent AlN regrowth in metalorganic chemical vapor deposition (MOCVD). The

Externí odkaz: https://doaj.org/article/4934d921f96f4b8ca7a5a75b85c3ff78

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