Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Hideto Kamba"'
Autor:
Hiroyuki S. Kato, T. Suzaki, Akira Namiki, S. Soeki, Hideto Kamba, T. Miyake, Tetsuro Nakamura
Publikováno v:
Physical Review B. 42:11801-11807
La probabilite d'adhesion initiale S 0 est mesuree par spectroscopie d'electrons Auger en fonction de la temperature de surface T s pour differentes energies incidentes E i . Pour E i =0,09 eV, ou le processus de piegeage-desorption domine, S 0 decro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::674a020316db832aad473a7a3a0abe0c
https://doi.org/10.1103/physrevb.42.11801
https://doi.org/10.1103/physrevb.42.11801
Autor:
Tatsuya Miyake, T. Suzaki, Masahiro Sakai, Hideto Kamba, Akira Namiki, Tetsurou Nakamura, Hiroyuki S. Kato
Publikováno v:
Japanese Journal of Applied Physics. 30:349
The resonance-enhanced multiphoton ionization (REMPI) technique has been used to probe the dynamics of NO scattering from oxygen-covered Si(100) as a function of incident beam energy E i and incident angle θi. A direct inelastic scattering process a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10a303bb1f0c8a5499d08c845e1ebc4b
https://doi.org/10.1143/jjap.30.349
https://doi.org/10.1143/jjap.30.349
Publikováno v:
Surface Science Letters. 242:A52
Molecular beam techniques have been used to probe the dynamics of oxidation of a Si(100) surface as a function of incident energy E i , incident angle θ i and surface temperature T s . The angular distributions of scattered O 2 from Si(100) are clea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49ab825c1af7f790894395ed9d1a78bf
https://doi.org/10.1016/0167-2584(91)90477-9
https://doi.org/10.1016/0167-2584(91)90477-9
Autor:
Akira Namiki, Shinya Soeki, Miyake Tatsuya, Tetsurou Nakamura, Hideto Kamba, Takayuki Takemoto, T. Suzaki, Hiroyuki Katoh
Publikováno v:
Japanese Journal of Applied Physics. 29:723
The trapping and desorption kinetics of oxygen on, Si(100) surfaces have been studied by a pulsed molecular beam method. The trapping process in a physisorbed well is a dominant process for the incident energy below 0.09 eV. Above 0.3 eV, the trappin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae148522974abceab54f522a323ca4ad
https://doi.org/10.1143/jjap.29.723
https://doi.org/10.1143/jjap.29.723