Zobrazeno 1 - 10 of 71 pro vyhledávání: '"Hidetami Yaegashi"'
3
Understanding the Significance of Local Variability in Defect-Aware Process Windows
Autor: Dorin Cerbu, Hidetami Yaegashi, Arisa Hara, Andreas Frommhold, Mark John Maslow
Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 33:42-52
Process windows based on Mean CD (“Critical Dimension”) have been an analysis workhorse for estimating and comparing the robustness of semiconductor microlithography processes for more than 30 years. While tolerances for variation of CD are decre
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::88ef7cf690e887c9571a5223d6a143f6
https://doi.org/10.1109/tsm.2019.2960090
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5
Fundamental study of polymer dynamic behavior in resist processing
Autor: Hidetami Yaegashi
Publikováno v: Advances in Patterning Materials and Processes XXXVIII.
Although Extreme Ultra Violet (EUV) at 13.5 nm wavelength already moved into commercialization state, serious technical issues remain as important challenges. Local variation, such as intra-filed CD uniformity or LER, is typically identified from cal
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1088b88bee9cb453f6c9afa43f621ada
https://doi.org/10.1117/12.2582275
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6
Consideration of missing defect suppression technique in EUV hole patterning
Autor: Arisa Hara, Satoru Shimura, Hidetami Yaegashi, Takahiro Shiozawa
Publikováno v: Advances in Patterning Materials and Processes XXXVII.
This study focused on the defect behavior analysis with CD variation on EUV via hole pattern using photolithographic process and etch transfer performance. While defect requirements are not as stringent for memory devices, logic devices must be defec
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::23593263ac7bf31ae2b7fb02a2926f5b
https://doi.org/10.1117/12.2551822
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7
Explorations of missing hole defect in EUV patterning
Autor: Soichiro Okada, Hidetami Yaegashi, Satoru Shimura, Arisa Hara
Publikováno v: Advances in Patterning Materials and Processes XXXVII.
Although EUV process was actually inserted to HVM as realistic photographic scaling driver relieving from Multiple patterning, process/material induced defect, especially missing type defect on via hole, must be serious problem and it is really consi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77cc358935f02cec7d4461d640c5b144
https://doi.org/10.1117/12.2551471
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9
Impact of local variability on defect-aware process windows
Autor: Guido Schiffelers, Andreas Frommhold, Gijsbert Rispens, Keisuke Yoshida, Abhinav Pathak, Felix Wahlisch, Dorin Cerbu, Eric Hendrickx, Joost Bekaert, Bram Slachter, Hidetami Yaegashi, Mark John Maslow, Arisa Hara, Noriaki Oikawa
Publikováno v: Extreme Ultraviolet (EUV) Lithography X.
CD-based process windows have been an analysis workhorse for estimating and comparing the robustness of semiconductor microlithography processes for more than 30 years. While tolerances for variation of CD are decreasing in step with the target CD si
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::91a1dd3a1d1ea48a6ecc50f4b5ac8f8a
https://doi.org/10.1117/12.2514719
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10
Defect conscious approaches in EUV patterning
Autor: Arisa Hara, Hidetami Yaegashi
Publikováno v: Advances in Patterning Materials and Processes XXXVI.
The aim of this study is to lessen the number of defects by the simultaneous analyses of detection result via the lithography process and etch transfer performance. While defect requirements aren’t as stringent for memory devices, logic devices mus
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6c3df49612d14c71d06e079329ab79f3
https://doi.org/10.1117/12.2514664
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