Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Hideshi Miyajima"'
Publikováno v:
Micro and Nano Engineering, Vol 3, Iss , Pp 1-6 (2019)
The chemical bonding structure of porous low-k carbon-doped silicon oxide (SiOC) films (k
Externí odkaz:
https://doaj.org/article/c01994d2c5d945d285084a256fef5536
Chemical bonding structure in porous SiOC films (k < 2.4) with high plasma-induced damage resistance
Publikováno v:
Micro and Nano Engineering, Vol 3, Iss, Pp 1-6 (2019)
The chemical bonding structure of porous low-k carbon-doped silicon oxide (SiOC) films (k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4ecf91ca1a08059b9461948fff0cc26
http://www.sciencedirect.com/science/article/pii/S2590007219300097
http://www.sciencedirect.com/science/article/pii/S2590007219300097
Autor:
Junko Abe, Ryota Fujitsuka, Fumiki Aiso, Keiichi Sawa, Yoshihiro Ogawa, Shunsuke Okada, Takanori Yamanaka, Hideshi Miyajima, Seiji Nakagawa, Masaki Noguchi, Tomonori Aoyama, Tatsunori Isogai, Hiroyuki Yamashita
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
For high reliability non-volatile memory cell dielectrics, hydrogen-free deuterated charge-trap SiN and tunnel SiON films are demonstrated. By using deuterated ammonia instead of ammonia as nitridation species in ALD cycles, an ultra-high deuterium/h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22efb95164787ff073382b86349989af
https://doi.org/10.1109/iedm19573.2019.8993586
https://doi.org/10.1109/iedm19573.2019.8993586
Publikováno v:
Plasma Processes and Polymers. 16:1900039
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1453776d5e426bc06b798dfda7ca732d
https://doi.org/10.1002/ppap.201900039
https://doi.org/10.1002/ppap.201900039
Publikováno v:
Micro and Nano Engineering. 3:92
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85205d81ad0a7f2399e29852be5b097f
https://doi.org/10.1016/j.mne.2019.05.004
https://doi.org/10.1016/j.mne.2019.05.004
Publikováno v:
Japanese Journal of Applied Physics. 58:020908
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb76d10567021e8bd8fe124423eadeac
https://doi.org/10.7567/1347-4065/aafb5b
https://doi.org/10.7567/1347-4065/aafb5b
Autor:
Frieder H. Baumann, Masayoshi Tagami, Atsushi Ogino, Hideshi Miyajima, Hosadurga Shobha, Terry A. Spooner, Fuminori Ito
Publikováno v:
ECS Transactions. 41:405-413
Introduction A porous low-k film has been introduced to reduce the interconnect capacitance as the LSI generation progress [1-2]. Since the porous low-k film has larger porosity and higher carbon content than conventional rigid films, its surface is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::326f7de84d45535f61f74dfb44c8d330
https://doi.org/10.1149/1.3633321
https://doi.org/10.1149/1.3633321
Autor:
Toshiaki Hasegawa, Kiyotaka Tabuchi, Hideaki Masuda, K. Watanabe, Hideshi Miyajima, Hideki Shibata, Takamasa Usui
Publikováno v:
Japanese Journal of Applied Physics. 45:1570-1574
The effect of plasma treatment and a dielectric diffusion barrier on electromigration (EM) performance was examined. The characteristics and adhesion properties at the interface between copper (Cu) and the dielectric diffusion barrier were also inves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::336497c5ee9b96ec29017522044b0766
https://doi.org/10.1143/jjap.45.1570
https://doi.org/10.1143/jjap.45.1570
Autor:
K. Muraoka, Hidetoshi Koike, E. Fukuda, S. Hohkibara, Nobuo Hayasaka, Hideshi Miyajima, K. Tomioka, M. Kimura, Fumiyoshi Matsuoka
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 11:54-62
We describe equipment and facility operational methods in a production fab which are designed to achieve quick-turnaround-time (QTAT) manufacturing and ease product transfer from development to mass production. An advanced CIM system with precise lot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f02502dda5d278cd8c3be7c9cc04467
https://doi.org/10.1109/66.661285
https://doi.org/10.1109/66.661285
Autor:
Kei Watanabe, H. Naruse, Tatsuya Usami, Hideaki Masuda, T. Kameshima, Y. Enomoto, A. Gawase, M. Tagami, Hideshi Miyajima, C. Maruyama, Miyoko Shimada, M. Sekine, T. Kitano, Naofumi Nakamura, Y. Kagawa
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
Adhesion tests for a real Cu/low-k patterned structure were studied for 45-nm node devices. Results from 4 point-bending (4PB) and modified edge lift-off tests (m-ELT) were compared. Cu dual damascene interconnects structures with stacked hybrid low-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fedfff23147a5207cf0f46dfc64f6536
https://doi.org/10.1109/iitc.2007.382358
https://doi.org/10.1109/iitc.2007.382358