Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hideshi Kawasaki"'
Autor:
Michio Kosugi, Hiroaki Kobayashi, Yasumasa Miyazaki, Hideshi Kawasaki, Yuichiro Konnai, Shotaro Watanabe, Kazunori Shojo, Masaru Ishida
Publikováno v:
Videourology. 34
Introduction and Objectives: Bleeding is one of the most unfavorable postoperative complications of partial nephrectomy. It is generally accepted that renorrhaphy is necessary for hemostasis becaus...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b66ac9e17b701cd51989fbd8302aeb9
https://doi.org/10.1089/vid.2019.0096
https://doi.org/10.1089/vid.2019.0096
Autor:
Hajime Sakata, Hideshi Kawasaki
Publikováno v:
Applied Physics Letters. 64:1201-1203
We demonstrated an integrated channel‐dropping photodetector in which a desired wavelength channel of the optical power is selectively coupled to a detector element. Based on a codirectionally grating‐coupled GaAs/AlGaAs filter structure, a 1.2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31f77242666c202df70e0041e41b4084
https://doi.org/10.1063/1.110889
https://doi.org/10.1063/1.110889
Publikováno v:
HETEROCYCLES. 40:511
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e42d42f33355381eb5efb36c6b98ad35
https://doi.org/10.3987/com-94-s59
https://doi.org/10.3987/com-94-s59
Publikováno v:
Japanese Journal of Applied Physics. 31:L1710
Polycrystalline GaAs was grown by selective deposition using metalorganic chemical vapor deposition. The nucleation of polycrystalline GaAs took place on a small seed of polycrystalline Si on the substrate and overgrowth proceeded to SiO2 which cover
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::893a85e2baf9c8c374345be6d63daa1c
https://doi.org/10.1143/jjap.31.l1710
https://doi.org/10.1143/jjap.31.l1710
Publikováno v:
Japanese Journal of Applied Physics. 27:1548
The surface quality of a flat surface circular buried heterostructure (FCBH) is improved by reducing the diameter of circular mesa to ∼ 15 µmφ. The minimum threshold current is I th=12 mA at 77 K under CW condition, which is the lowest value ever
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a956b5c7a5492cb9a824abc054350d66
https://doi.org/10.1143/jjap.27.1548
https://doi.org/10.1143/jjap.27.1548
Publikováno v:
Japanese Journal of Applied Physics; December 1992, Vol. 31 Issue: 12 pL1710-L1710, 1p