Zobrazeno 1 - 10
of 114
pro vyhledávání: '"Hideo Sunami"'
Autor:
Hideo Sunami
Publikováno v:
Advances in Solid State Circuit Technologies
This chapter describes a trend in dimension increase in structures of semiconductor memories and transistors focusing on metal-oxide-semiconductor, MOS devices. One, two, and three-dimensional (3-D) structures correspond to a legacy of grown-junction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dc0e29a9a381e924bbaa42f82e0d268
http://www.intechopen.com/articles/show/title/dimension-increase-in-metal-oxide-semiconductor-memories-and-transistors
http://www.intechopen.com/articles/show/title/dimension-increase-in-metal-oxide-semiconductor-memories-and-transistors
Publikováno v:
Microelectronic Engineering. 88:213-217
A solid-gate-insulator-less field-effect transistor, named metal-gas-semiconductor FET, MGSFET is proposed. This is aimed to avoid possible failures such as dielectric breakdown of the gate due to the gate insulator. A fundamental process sequence an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b145aaa589a3180b2cd0746974db6479
https://doi.org/10.1016/j.mee.2010.08.007
https://doi.org/10.1016/j.mee.2010.08.007
Publikováno v:
Japanese Journal of Applied Physics. 47:2906-2909
A novel silicon optical modulator, originally based on inversion-carrier absorption, with a metal–oxide–semiconductor capacitor structure has been proposed and successfully developed. In this report, we will describe experimental results for a mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4026a5b2773dd2d38127b159755f4fe8
https://doi.org/10.1143/jjap.47.2906
https://doi.org/10.1143/jjap.47.2906
Publikováno v:
Microelectronic Engineering. 84:1631-1634
An application of arsenic plasma doping for source and drain formation in three-dimensional (3-D) MOS transistor is proposed in terms of fundamental transistor performance aiming uniform doping over entire silicon beam surface. Preliminary results sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::febb992d60eb9c6c5e2c9c4bfe34c635
https://doi.org/10.1016/j.mee.2007.01.259
https://doi.org/10.1016/j.mee.2007.01.259
Publikováno v:
Japanese Journal of Applied Physics. 46:2050-2053
A silicon-on-insulator (SOI) n-type metal–oxide–semiconductor (MOS) transistor with additional side gate electrodes is fabricated and its subthreshold characteristics are discussed. Since its device structure provides independent biasing to gates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46aca5f074de1c080c39fcd0d48c8e71
https://doi.org/10.1143/jjap.46.2050
https://doi.org/10.1143/jjap.46.2050
Publikováno v:
Japanese Journal of Applied Physics. 45:3498-3503
A microscopic optical waveguide fabrication technique on silicon substrates at low temperatures using a fluorinated polyimide (FPI) is developed for application in an optically interconnected LSI. Propagation loss decreases to about 1.0 dB/cm in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dc05723dca615c89b37942b74aa79fa
https://doi.org/10.1143/jjap.45.3498
https://doi.org/10.1143/jjap.45.3498
Publikováno v:
Sensors and Actuators A: Physical. 111:310-316
Along with continuous scaling of MOS devices on LSI’s since early 1970s, it is widely recognized that three-dimensional (3-D) transistor structures will increasingly be important to extend further scaling in future. In response to the requirement,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d3e0bdaa98983e6726eff466550492b
https://doi.org/10.1016/j.sna.2003.10.081
https://doi.org/10.1016/j.sna.2003.10.081
Autor:
Shin Yokoyama, Hideo Sunami, Quazi D. M. Khosru, Kentaro Shibahara, Takamaro Kikkawa, Takenobu Yoshino, Anri Nakajima
Publikováno v:
Japanese Journal of Applied Physics. 42:L1429-L1432
The influence of organic contaminants on process-induced interface trap generation and oxide reliability has been investigated using n-type metal oxide semiconductor field-effect transistors (MOSFETs) and capacitors. It has been observed that adsorpt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b0dfe85d0ddc66934f94b9d010f2fc7
https://doi.org/10.1143/jjap.42.l1429
https://doi.org/10.1143/jjap.42.l1429
Publikováno v:
Japanese Journal of Applied Physics. 42:2067-2072
In this study, a three-dimensional (3-D) transistor with 1-µm-high multi-beams is proposed. This is named corrugated-channel transistor (CCT) after its "corrugated structure of channels". To realize the corrugated structure, an orientation dependent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94498d924582a90831d2a6c14b297267
https://doi.org/10.1143/jjap.42.2067
https://doi.org/10.1143/jjap.42.2067
Autor:
Hideo Sunami
Publikováno v:
Kobunshi. 52:546-550
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb41a4bb6c3b3912443365d5ccf568c6
https://doi.org/10.1295/kobunshi.52.546
https://doi.org/10.1295/kobunshi.52.546