Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Hideo Kotani"'
Autor:
Hideo Kotani, Yoshio Miyoshi, Hirotaka Tanabe, Kenichi Obori, Yoshinori Hosokawa, Sumito Ozawa, Tohru Takamatsu
Publikováno v:
The Proceedings of Conference of Kansai Branch. :5-9
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 78:59-66
Formation of a TiN/Ti adhesion layer by collimated sputtering for a structured surface with a high aspect ratio was investigated. The bottom coverage was simulated and the simulated and experimental results were compared. As a result, it was found th
Autor:
Hideo Kotani
Publikováno v:
IEEJ Transactions on Fundamentals and Materials. 111:594-599
Publikováno v:
IEEE Transactions on Electron Devices. 37:569-576
A selective CVD tungsten process using silane reduction of tungsten hexafluoride has been investigated. A deposition rate as high as 0.6 mu m/min is obtained. The properties of the tungsten films have been investigated by X-ray diffraction, secondary
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A low-temperature APCVD (atmospheric-pressure chemical vapor deposition) process using TEOS-O/sub 3/ chemistry has been investigated as an interlayer dielectric application technique for multilevel interconnections. The deposition rates depend on the
Autor:
A. Kiermasz, R. Wilby, T. Nishimura, Y. Hayashide, Matsuura, K. Beekmann, Hideo Kotani, C.D. Dobson, H. Iuchi
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
This paper presents a highly-reliable interlayer dielectric process using a novel CVD method. The key to the process is a unique chemistry of SiH/sub 4/ and H/sub 2/O/sub 2/, which generates a liquid intermediate filling very narrow gaps and providin
Autor:
J. Miyazaki, M. Iwasaki, S. Nakao, Atsushi Ishii, T. Katayama, Y. Takata, Hideo Kotani, M. Matsuura, J. Komori, A. Ohsaki, N. Fujiwara
Publikováno v:
1991 Proceedings Eighth International IEEE VLSI Multilevel Interconnection Conference.
The authors describe a noble interconnection process technology for 0.6 mu m CMOS devices. The line and space are 0.6 mu m/0.6 mu m for the first metal and 1.0 mu m/0.8 mu m for the second metal. Contact holes with a diameter of 0.7 mu m are filled w
Publikováno v:
Japanese Journal of Applied Physics. 18:279-283
Changes in refractive index and in film thickness caused by electron beam irradiation are studied in poly (metyl methacrylate), PMMA. The index at 0.633 µm increases by 8% and the thickness decreases by 12% after 10-3 C/cm2 irradiation. Utilizing th
Publikováno v:
Journal of The Electrochemical Society. 130:645-648
Publikováno v:
TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series B. 47:2210-2220