Zobrazeno 1 - 10
of 140
pro vyhledávání: '"Hideo Iwai"'
Autor:
Piotr Klukowski, Fred F. Damberger, Frédéric H.-T. Allain, Hideo Iwai, Harindranath Kadavath, Theresa A. Ramelot, Gaetano T. Montelione, Roland Riek, Peter Güntert
Publikováno v:
Scientific Data, Vol 11, Iss 1, Pp 1-13 (2024)
Abstract Multidimensional NMR spectra are the basis for studying proteins by NMR spectroscopy and crucial for the development and evaluation of methods for biomolecular NMR data analysis. Nevertheless, in contrast to derived data such as chemical shi
Externí odkaz:
https://doaj.org/article/d607f976b6f94288a6a64321321d3e7a
Autor:
Bo Da, Jiangwei Liu, Mahito Yamamoto, Yoshihiro Ueda, Kazuyuki Watanabe, Nguyen Thanh Cuong, Songlin Li, Kazuhito Tsukagoshi, Hideki Yoshikawa, Hideo Iwai, Shigeo Tanuma, Hongxuan Guo, Zhaoshun Gao, Xia Sun, Zejun Ding
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-9 (2017)
Quantitative characterization of supported nanomaterials is challenging, because the nanomaterial signals cannot easily be deconvoluted from those of the substrate. Here, the authors introduce an inventive approach to overcome this problem for electr
Externí odkaz:
https://doaj.org/article/a4b91c49af054e57bb2dcd903a590157
Autor:
Masatomo Sumiya, Kiyotaka Fukuda, Hideo Iwai, Tomohiro Yamaguchi, Takeyoshi Onuma, Tohru Honda
Publikováno v:
AIP Advances, Vol 8, Iss 11, Pp 115225-115225-7 (2018)
We characterize the behavior caused by thermal annealing for C, O, Si and Mg ions implanted in GaN films by photothermal deflection spectroscopy (PDS) with respect to structural disorder and defect levels related to yellow luminescence. Although the
Externí odkaz:
https://doaj.org/article/3ce3190185e24782acf3695b516a3e19
Autor:
Hongzheng Chen, Mohammad Rezwan Habib, Zhihong Feng, Han Xiao, Nobutaka Hanagata, Yuhan Kong, Cui Yu, Hideo Iwai, Tao Liang, Daisuke Fujita, Shuang Xie, Mingsheng Xu
Publikováno v:
ACS Applied Electronic Materials. 2:1055-1064
Heterogeneous atoms doping has been proven as an efficient route to tune the physical and chemical properties of semiconductors, represented by the technically mature boron and phosphorus doping in...
Autor:
Kiyoshi Abe, Takashi Sunohara, Satoru Yamaguchi, Takayuki Yamagishi, Satoka Aoyagi, Hideo Iwai
Publikováno v:
Analytical and Bioanalytical Chemistry. 409:6387-6396
Blood adsorption onto the inside surface of hollow fiber dialysis membranes was investigated by means of time-of-flight secondary ion mass spectrometry (TOF-SIMS) and near-field infrared microscopy (NFIR) in order to evaluate the biocompatibility and
Autor:
Ahmed A. Elzatahry, Ajayan Vinu, Hideo Iwai, Salem S. Al-Deyab, Abdullah M. Al-Enizi, Aboubakr M. Abdullah
Publikováno v:
Applied Surface Science. 401:306-313
Nitrogen-Doped Carbon Nanofiber (N-CNF)–supported NiO composite was prepared by electrospinning a sol-gel mixture of graphene and polyaniline (PANi) with aqueous solutions of Polyvinylpyrrolidone (PVP) followed by a high-temperature annealing proce
Autor:
Weifei Fu, Shuang Xie, Tao Liang, Nobutaka Hanagata, Yu Cai, Hideo Iwai, Hongzheng Chen, Mingsheng Xu, Chinnathambi Shanmugavel, Daisuke Fujita
Publikováno v:
Nanoscale. 9:6984-6990
Atomically thin, two-dimensional materials ranging from superconductors, metals, semiconductors to insulators are emerging as potential candidates for the next-generation digital electronics and optoelectronic applications. Their synthesis on a commo
Autor:
Yu, Su, Yoshihiro, Tsujimoto, Kotaro, Fujii, Yuji, Masubuchi, Hirohito, Ohata, Hideo, Iwai, Masatomo, Yashima, Kazunari, Yamaura
Publikováno v:
Chemical communications (Cambridge, England). 55(50)
A topochemical reaction between SrCrO
Autor:
Yoshihiro Tsujimoto, Kazunari Yamaura, Masatomo Yashima, Hideo Iwai, Yuji Masubuchi, Kotaro Fujii, Yu Su, Hirohito Ohata
Publikováno v:
Chemical Communications.
A topochemical reaction between SrCrO3 and polyvinylydene fluoride yields the new fluorinated phase SrCrO2.8F0.2. The transformation proceeds via a reduced oxide intermediate (SrCrO2.8) that can be isolated as a single phase by the reaction between S
Publikováno v:
Superlattices and Microstructures. 99:165-168
When we observe a p-n junction in a certain semiconductors using scanning electron microscope, it is known that the p-type region is brighter than n-type region in secondary electron (SE) image. To clarify this origin, the p-n junctions in 4H-SiC was