Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hideo Funakoshi"'
Autor:
Hideo Funakoshi, Masatoshi Terayama, Mitsuaki Maruyama, Junko Iizuka, Masamitsu Itoh, Hideaki Iwasaka, Mari Sakai, Naoya Hayashi, Hideaki Sakurai
Publikováno v:
SPIE Proceedings.
EUV lithography is one of the approaches to manufacture half-pitch 1x nm devices. It is required high CD mean control, high CD uniformity, and low defect density for EUV mask in common with DUV mask. In addition, backside defect density is drasticall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c31d80e9e115296d593494da1f970862
https://doi.org/10.1117/12.979645
https://doi.org/10.1117/12.979645
Autor:
Mari Sakai, Masatoshi Terayama, Yoshihiko Saito, Syoutarou Miyazaki, Hideaki Sakurai, Takahiro Shiozawa, Osamu Ikenaga, Ito Masamitsu, Naoya Hayashi, Hideo Funakoshi
Publikováno v:
SPIE Proceedings.
Mask development process for 2x nm node devices needs stringent CD uniformity and CD linearity. To evaluate and improve these CD qualities, we proposed to introduce electric-field-induced-development method into proximity gap suction development syst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03e9e0627cb9bfd4d204fd18d4ae0590
https://doi.org/10.1117/12.824310
https://doi.org/10.1117/12.824310
Autor:
Kenji Nakamizo, Junji Nakao, Masatoshi Terayama, Masamitsu Itoh, Norifumi Sato, Masato Nomura, Naoya Hayashi, Hideo Funakoshi, Yoshihiko Saito, Osamu Ikenaga, Mari Sakai, Hideaki Sakurai
Publikováno v:
Photomask Technology 2008.
Development process for 3x nm node devices and beyond is becoming a great issue in mask fabrication. The following items, such as uniformity, repeatability, loading effect and defect must be improved. To evolve the development process, TEL, DNP Omron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bc210b6bd42f856343426a625b9158f
https://doi.org/10.1117/12.801424
https://doi.org/10.1117/12.801424
More evolved PGSD (proximity gap suction developer) for controlling movement of dissolution products
Autor:
Hideaki Sakurai, Mari Sakai, Naoya Hayashi, Yoshiki Okamoto, Masamitsu Itoh, Yukio Oppata, Kotaro Ooishi, Masatoshi Kaneda, Hideo Funakoshi, Hidehiro Watanabe, Koji Murano, Shigenori Kamei
Publikováno v:
SPIE Proceedings.
PGSD is one of the solutions as a developer of 70 nm node generation mask fabrication. To make 55 nm node generation mask, CD error induced by loading effect (loading-effect-induced CD error) must be reduced. As is generally known, primary cause of l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe579518dfc03b9cd95f00a68c350995
https://doi.org/10.1117/12.685740
https://doi.org/10.1117/12.685740
Autor:
Hideaki Sakurai, Naoya Hayashi, Tooru Shibata, Hideo Funakoshi, Kotaro Ooishi, Masatoshi Kaneda, Shigenori Kamei, Yoshiki Okamoto, Masamitsu Itoh, Shigemi Oono
Publikováno v:
SPIE Proceedings.
CD error caused by loading effect is becoming a significant issue in mask fabrication. At the same time, quantification method of CD error caused by loading effect has not been established in many cases because it is very difficult to measure the err
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::521dbff1c1742980868704a37aa43a50
https://doi.org/10.1117/12.637275
https://doi.org/10.1117/12.637275
Autor:
Gaston Lee, Wolfram Porsche, Tetsushi Miyamoto, Hideo Funakoshi, Shinji Koga, Yoshiki Okamoto, Shigenori Kamei, Shigemi Oono, Takahiro Fukai, Rusty Cantrell, Hiroshi Asai, Martin Tschinkl, Tatsuhito Kotoda, Axel Feicke, Peter Tichy, Kazuhiro Takeshita
Publikováno v:
SPIE Proceedings.
The challenges, mask manufacturing is faced with, are more and more dominating the semiconductor industry as the pattern sizes shrink. Today's mask patterns have reached sizes that are common in wafer manufacturing. Looking into the industry, we can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aea07948e24d03fa205a2e63281f5b9
https://doi.org/10.1117/12.568820
https://doi.org/10.1117/12.568820
Publikováno v:
The Journal of Physical Chemistry. 80:1753-1761
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8220db7d634c99e4461f5d0987cbe65e
https://doi.org/10.1021/j100557a004
https://doi.org/10.1021/j100557a004
Autor:
Hideo Funakoshi
Publikováno v:
Bulletin of the Chemical Society of Japan. 35:1025-1029
The gas absorption by cobalt oleate and stearate has been studied. It was found that cobalt oleate absorbs oxygen very remarkably, but nitrogen and hydrogen, very little. Cobalt stearate absorbs oxygen negligibly, but in the presence of oleic acid th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::653782a0696bc0eb0554843fa47876b5
https://doi.org/10.1246/bcsj.35.1025
https://doi.org/10.1246/bcsj.35.1025
Autor:
Hideo Funakoshi
Publikováno v:
Nippon kagaku zassi. 83:425-430,A28
オイレン酸コバルトのベンゼン,四塩化炭素,ピリジン,クロロホルム溶液の粘度を種々の老化時間,濃度および温度において測定した。無極性溶媒に溶かしたオレイン酸コバルトの溶液の粘
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d62a6c5adbb3559dfa62d33e1532b15e
https://doi.org/10.1246/nikkashi1948.83.4_425
https://doi.org/10.1246/nikkashi1948.83.4_425
Autor:
Ryohei Matuura, Hideo Funakoshi
Publikováno v:
Nature. 204:186-186
WE have found that the viscosity of the solution of cobalt oleate in non-polar solvents such as benzene and carbon tetrachloride is unusually high even at low concentrations and, in addition, shows a tendency to increase more and more with time of ag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d8d54bd2dfa5a225a5c6cd83cc0bf94
https://doi.org/10.1038/204186a0
https://doi.org/10.1038/204186a0