Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Hideo Aida"'
Publikováno v:
Jin'gangshi yu moliao moju gongcheng, Vol 42, Iss 6, Pp 637-649 (2022)
Wide-band-gap semiconductors such as silicon carbide, gallium nitride, and diamond are known as hard-to-process materials. In this study, two types of chemical mechanical polishing (CMP)-related processing equipment were designed to create novel high
Externí odkaz:
https://doaj.org/article/527951fee8244ef9bfc9332f909ec3a4
Publikováno v:
Mechanical Engineering Journal, Vol 3, Iss 1, Pp 15-00509-15-00509 (2016)
This study investigated the contact interface behavior between a wafer and a polishing pad in sapphire- chemical mechanical polishing (CMP) for considering the improvement of the removal rate. In our previous study we clarified that the linear veloci
Externí odkaz:
https://doaj.org/article/9e50b0c0687d4608b681a3d62948f445
Autor:
Yasuhisa SANO, Kousuke SHIOZAWA, Toshiro DOI, Syuhei KUROKAWA, Hideo AIDA, Tadakazu MIYASHITA, Kazuto YAMAUCHI
Publikováno v:
Mechanical Engineering Journal, Vol 3, Iss 1, Pp 15-00527-15-00527 (2016)
A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond. We proposed a novel planarization method that
Externí odkaz:
https://doaj.org/article/b9327b613ac944f58f38a94382fb8710
Autor:
Toshiro K. DOI, Kiyoshi SESHIMO, Tsutomu YAMAZAKI, Masanori OHTSUBO, Hideaki NISHIZAWA, Sachi MURAKAMI, Daizo ICHIKAWA, Yoshio NAKAMURA, Tadakazu MIYASHITA, Yoshihide KAWAMURA, Masataka TAKAGI, Hiroshi KASHIWADA, Hideo AIDA
Publikováno v:
Nihon Kikai Gakkai ronbunshu, Vol 81, Iss 824, Pp 14-00618-14-00618 (2015)
In this study, we propose innovative polishing method for hard-to-process semiconductor substrate such as SiC. Our innovative polishing method mainly consists of 2 technologies. One is unprecedented polishing pad “Dilatancy pad” composed of speci
Externí odkaz:
https://doaj.org/article/1a7f830e563940f191c73d0708c9a60d
Publikováno v:
Journal of the Japan Society for Precision Engineering. 88:435-439
Publikováno v:
Diamond and Related Materials. 136:110026
Publikováno v:
Diamond and Related Materials. :110055
Publikováno v:
Precision Engineering. 67:350-358
A quantitative analysis of the surface and subsurface damage to gallium nitride (GaN) substrate from precise mechanical polishing with diamond abrasives and characterizations of their removal by the chemical mechanical polishing (CMP) process with co
Publikováno v:
SSRN Electronic Journal.
Autor:
Hideo Aida, Takumi Ojima, Ryuji Oshima, Takahiro Ihara, Hidetoshi Takeda, Yutaka Kimura, Atsuhito Sawabe
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:114005
Single-crystalline MgO is used as a substrate for the deposition of various functional thin films. The present study focused on the development of a complete sequence of fabricating atomic step-terrace structures on the MgO substrate via a method tha