Zobrazeno 1 - 10
of 331
pro vyhledávání: '"Hideo, Takeuchi"'
Autor:
Hideo Takeuchi
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 23:9-13
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8eaa027041d599b489b810bf1506691
https://doi.org/10.1109/tdmr.2022.3222783
https://doi.org/10.1109/tdmr.2022.3222783
Autor:
Hideo Takeuchi, Yuto Omuku, Ryota Onoda, Toshihiro Nakaoka, Jun Utsumi, Shigeo Kawasaki, Masatoshi Koyama
Publikováno v:
Optics Continuum. 1:2212
We succeeded in extending the decay time of terahertz electromagnetic waves from coherent longitudinal optical (LO) phonons in GaAs epitaxial layers with the use of fast atom bombardment, a treatment method for introducing defects and/or disorders at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdb31b3bf93d69792f7bba4e5cba02bd
https://doi.org/10.1364/optcon.472567
https://doi.org/10.1364/optcon.472567
Publikováno v:
AIP Advances, Vol 2, Iss 4, Pp 042189-042189-6 (2012)
We report on a presence of intermediate-range order in amorphous GeTe and Ge2Sb2Te5 phase change films prepared by simple vacuum-thermal deposition. We find that thermally deposited GeTe and Ge2Sb2Te5 films show significant first sharp diffraction pe
Externí odkaz:
https://doaj.org/article/5f7fe29e134b4f3c9df55512262e10f2
Autor:
Hideo Takeuchi
Publikováno v:
AIP Advances, Vol 1, Iss 4, Pp 042176-042176-7 (2011)
We have investigated the relation between the exciton photoluminescence intensity and distortion of the crystal plane in a ZnO wafer. The present investigation utilizes the following two characterization methods that complement the result of the phot
Externí odkaz:
https://doaj.org/article/3789e97f4dd8411da91cbccede52a510
Autor:
Hideo Takeuchi, Sotaro Fujiwara
Publikováno v:
Semiconductor Science and Technology. 36:105007
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bed307c6d9c1585726b6a1a45a1d777
https://doi.org/10.1088/1361-6641/ac1b14
https://doi.org/10.1088/1361-6641/ac1b14
Publikováno v:
Semiconductor Science and Technology. 35:065007
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eaa7920b829fd006c087cd0f430c6c6
https://doi.org/10.1088/1361-6641/ab7d4a
https://doi.org/10.1088/1361-6641/ab7d4a
Autor:
Hideo Takeuchi
Publikováno v:
Physics Procedia. 76:4-10
We demonstrate that sensitivity of polariscopy to residual strains is higher than that of the photoluminescence spectroscopy in a (110)-oriented ZnTe single crystal. We carried out x-ray topography and micro θ -2 θ x-ray diffraction measurements in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b92daede52a303691b6f1407bffa36a7
Autor:
Hideo Takeuchi
Publikováno v:
physica status solidi c. 11:1194-1197
We present the experimental fact that, in a (110)-oriented ZnTe single crystal, polariscopy is highly sensitive to the internal strain, comparing with Raman scattering spectroscopy. We utilized X-ray topography and X-ray diffraction analysis to thoro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e77b34ca9db3e04c47831f137a5ab749
https://doi.org/10.1002/pssc.201300608
https://doi.org/10.1002/pssc.201300608
Autor:
Tetsuya Yamada, Kikuo Tominaga, Hideo Takeuchi, Yuta Mori, Tatsuo Shirahama, Retsuo Kawakami, Masahito Niibe, Masashi Konishi
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 315:213-217
Damage characteristics of SiC surfaces etched by capacitively coupled radio frequency Ar plasmas at various gas pressures have been studied from the viewpoint of synergy effect of Ar plasma ion and plasma-induced ultraviolet (UV) light irradiations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03d5e7d135fb511942d7eb238b9af789
https://doi.org/10.1016/j.nimb.2013.05.084
https://doi.org/10.1016/j.nimb.2013.05.084
Publikováno v:
AIP Conference Proceedings. 1506(1):73-78
We demonstrate that, in a GaSb/GaAs epitaxial structure, a coherent longitudinal optical (LO) phonon in a GaAs buffer layer optically covered with a GaSb top layer is observed utilizing terahertz spectroscopy. It is confirmed from Raman scattering me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78c67c15358568192cd372dddb132eb2
https://dlisv03.media.osaka-cu.ac.jp/il/meta_pub/G0000438repository_15517616-1506-1-73
https://dlisv03.media.osaka-cu.ac.jp/il/meta_pub/G0000438repository_15517616-1506-1-73