Zobrazeno 1 - 10
of 49
pro vyhledávání: '"Hidenori Shimawaki"'
Autor:
Hidenori Shimawaki, Takaki Niwa, Kenichi Hosoya, Yasushi Amamiya, Shinichi Tanaka, Kazuhiko Honjo
Publikováno v:
IEEE Transactions on Circuits and Systems I: Regular Papers. 53:1670-1682
This paper presents a new type of transmission-line resonator and its application to RF (microwave and millimeter-wave) heterojunction bipolar transistor (HBT) oscillators. The resonator is a parallel combination of two open stubs having length of la
Publikováno v:
IEICE Transactions on Electronics. :672-677
The linear operation of a HBT with a GaAs/InGaP composite collector structure is demonstrated. The composite collector structure allows for a thin collector design that is suitable for the linear operation of a HBT without critical degradation of the
Autor:
Hidenori Shimawaki, Yasushi Amamiya, Kazuhiko Honjo, Hitoshi Yano, Yasuyuki Suzuki, N. Nagano
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:143-147
A preamplifier for 40-Gb/s optical transmission systems incorporating AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) with p/sup +/ regrown extrinsic base layers is described. The HBTs have a heavily doped regrown p/sup +/-GaAs layer in the e
Autor:
Takaki Niwa, Hitoshi Yano, Yasuyuki Suzuki, Hidenori Shimawaki, Yasushi Amamiya, Kazuhiko Honjo, N. Nagano
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:1336-1341
Baseband amplifiers of 50 GHz, using high-performance AlGaAs/InGaAs HBTs with regrown base contacts, have been demonstrated. The transimpedance amplifier achieved a bandwidth of 50.8 GHz with a gain of 11.6 dB. The transimpedance characteristics were
Autor:
S. Murakami, Yasushi Amamiya, Kazuhiko Honjo, Y. Takayama, N. Goto, Hidenori Shimawaki, Shinichi Tanaka
Publikováno v:
IEEE Transactions on Electron Devices. 45:36-44
Critical design issues involved in optimizing millimeter-wave power HBTs are described. Gain analysis of common-emitter (CE) and common-base (CB) HBTs is performed using analytical formulas derived based on a practical HBT model. While CB HBT's have
Publikováno v:
IEEE Transactions on Electron Devices. 42:1735-1744
The present paper describes a new approach to fabricating high performance HBT's with low base resistance. Their base contact resistance is reduced by using MOMBE selective growth in the extrinsic base region-a key process in the fabrication of high-
Autor:
Hironobu Miyamoto, Hidenori Shimawaki
Publikováno v:
68th Device Research Conference.
A GaN based field effect transistor (FET) on a silicon substrate is a promising candidate for next generation switching and RF power devices due to its high breakdown electric fields, high drift velocity and low substrate cost. A normally-off operati
Autor:
Kazuhiko Endo, Hidenori Shimawaki, Yuji Ando, Yasuhiro Okamoto, Hironobu Miyamoto, Kazuki Ota
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
In this paper, we successfully demonstrate a recessed gate normally-off GaN FET on a silicon substrate with high threshold voltage (V th ) uniformity and low on-resistance. In order to realize high V th uniformity, a novel V th control technique is p
Autor:
Y. Murase, K. Yamanoguchi, Kazuki Ota, Sadayoshi Yoshida, K. Matsunaga, Masahiro Tanomura, Hidenori Shimawaki
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest.
This paper describes the first demonstration of a 76 GHz gallium nitride (GaN) power amplifier (PA) on a silicon substrate. The PA microwave monolithic IC (MMIC) was fabricated by using AlGaN/GaN FET with a maximum oscillation frequency of 160GHz and
Autor:
Kenichi Maruhashi, Shuya Kishimoto, Yasuhiro Hamada, M. Ito, Naoyuki Orihashi, M. Tanomura, Hidenori Shimawaki
Publikováno v:
ISSCC
This paper describes the design of a mm-wave power amplifier PA with reliability considerations for hot carrier injection (HCI) degradation. A 60GHz-band single-chip transmitter front- end with an output power of 6dBm for 2.6 Gb/s QPSK modulation and