Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Hidenobu Nagashima"'
Publikováno v:
Solid State Phenomena. 134:185-188
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd27cfc2c50e67998aa33b789bc2e428
https://doi.org/10.4028/www.scientific.net/ssp.134.185
https://doi.org/10.4028/www.scientific.net/ssp.134.185
Autor:
Yasuhiko Matsunaga, Takayuki Toba, Takashi Izumida, Nobutoshi Aoki, Nobuhito Kawada, Toshitake Yaegashi, Kiwamu Sakuma, Yutaka Ishibashi, Ken Komiya, T. Watanabe, Motoki Sugi, Masashi Umemura, Hidenobu Nagashima, Takayuki Okamura, Masaki Kondo, Wataru Sakamoto
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
20nm-node planar MONOS cell which has improved reliability is developed. Extremely wide program/erase Vth window and good retention characteristics after cycling stress are obtained by buried charge cell structure. Moreover, Vth shift by interference
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaf7cdab28689dbeee0288cb145cbfd9
https://doi.org/10.1109/iedm.2009.5424211
https://doi.org/10.1109/iedm.2009.5424211
