Zobrazeno 1 - 10
of 111
pro vyhledávání: '"Hidemitsu Aoki"'
Autor:
Takuro Masuzumi, Hidemitsu Aoki, Takashi Sugino, Makoto Hara, Makoto Nishizaki, Chiharu Kimura, Zhiming Lu
Publikováno v:
Diamond and Related Materials. 20:609-612
Methyl-BCN film as a low dielectric material has been investigated by our group for Cu/low-k interconnection. We studied the ashing characteristics of Methyl-BCN films using oxygen plasma. As a contrast, porous-SiOCH films were also treated by oxygen
Publikováno v:
Electrical Engineering in Japan. 174:45-50
We have attempted to develop high-performance and safe fuel cells by using ammonium formate as a solid (powder) fuel. This solid fuel has the potential of safer transportability than liquid fuels such as methanol from the viewpoint of toxicity and fl
Influence of the methyl group on the dielectric constant of boron carbon nitride films containing it
Autor:
Zhiming Lu, Makoto Hara, Daisuke Watanebe, Takuro Masuzumi, Hidemitsu Aoki, Takashi Sugino, Chiharu Kimura
Publikováno v:
Diamond and Related Materials. 19:1437-1440
LSI interconnect insulators made using low dielectric constant (low-k) materials are required for high performance devices with a small RC delay. We investigated a boron carbon nitride film containing the methyl group (Me–BCN) using tris-di-methyl-
Publikováno v:
Diamond and Related Materials. 19:1441-1445
Boron carbon nitride (BCN) films are synthesized with various growth conditions by remote plasma-assisted chemical vapor deposition method. The chemical bonding in the BCN film is modified by the growth condition. Optical and electrical properties ar
Autor:
Masatomo Honjo, Hirotaka Tanaka, Keiko Masumoto, Yukihiko Okumura, Chiharu Kimura, Hidemitsu Aoki, Naoyoshi Komatsu, Takashi Sugino
Publikováno v:
Applied Surface Science. 257:1437-1440
A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high-power field effect transistors (FET) using wide bandgap semiconductors such as SiC, GaN, and diamond. It is observed that an aluminum silicon oxide (
Publikováno v:
Applied Surface Science. 256:6512-6517
The oxidation process on silicon carbide (SiC) surfaces is important for wide bandgap power semiconductor devices. We investigated SiC oxidation using supercritical water (SCW) at high pressure and temperature and found that a SiC surface can be easi
Publikováno v:
Solid State Communications. 150:1396-1399
Photoluminescence (PL) of Tb-doped AlBON (AlBON:Tb) films is investigated. The AlBON:Tb films are synthesized by RF magnetron sputtering. The PL intensity of the film with 800 °C annealing is about 10 times larger than that of the film without annea
Publikováno v:
Applied Surface Science. 256:1803-1806
Synthesis of Si-added aluminum oxide (AlSiO) films is attempted as an insulating film with both a wide bandgap and a high dielectric constant. Electrical characteristics of AlSiO films are investigated. Leakage current of the AlO film is suppressed b
Autor:
Keiko Masumoto, Naoyoshi Komatsu, Takashi Sugino, Chiharu Kimura, Hidemitsu Aoki, Masatomo Honjo
Publikováno v:
Materials Science Forum. :3943-3948
A gate insulator film with a wide bandgap and a high dielectric constants required to achieve high power field effect transistor (FET) using wide bandgap semiconductors such as SiC and diamond. We can achieve to suppress the gate leakage current and
Publikováno v:
ECS Transactions. 19:59-65
In order to apply the P(VDF-TeFE) piezoelectric polymer to the micro-generator based on MEMS technology, we have established a process condition of the film formation. A solvent which is used to cast P(VDF-TeFE) solution is important factor for film