Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Hidemasa Takahashi"'
Publikováno v:
Electronics Letters, Vol 59, Iss 10, Pp n/a-n/a (2023)
Abstract This article reports radio frequency characteristics of 150‐nm gate aluminum gallium nitride (AlGaN)/gallium nitride (GaN) high electron mobility transistors (HEMTs) fabricated using i‐line stepper lithography and a thermal reflow techni
Externí odkaz:
https://doaj.org/article/acd56a6c3924475d95f28c55cc4575c8
Autor:
Hidemasa Takahashi, Yuji Ando, Yoichi Tsuchiya, Akio Wakejima, Hiroaki Hayashi, Eiji Yagyu, Koichi Kikkawa, Naoki Sakai, Kenji Itoh, Jun Suda
Publikováno v:
Electronics Letters, Vol 57, Iss 21, Pp 810-812 (2021)
Abstract Here, a gated‐anode diode (GAD) is proposed where an anode electrode is formed by connecting a gate electrode and an ohmic electrode of a normally‐off GaN HEMT for a 5.8 GHz rectenna. A wide recessed gate GaN GADs were prepared and the r
Externí odkaz:
https://doaj.org/article/aaa4131eb892405598db2ff407ab0a62
Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i‐line stepper
Publikováno v:
Electronics Letters, Vol 57, Iss 24, Pp 948-949 (2021)
Abstract This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transistor (HEMT) process using i‐line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150
Externí odkaz:
https://doaj.org/article/c4089ebe3da344e09f0a4a653c6cd516
Autor:
Hidemasa Takahashi, Takeo Suzuki
Publikováno v:
JA Clinical Reports, Vol 4, Iss 1, Pp 1-4 (2018)
Abstract Background Patients with failed back surgery syndrome (FBSS) experience chronic back pain following spinal surgery, and effective treatment is difficult because of multiple contributing factors. Case presentation Here we report a case involv
Externí odkaz:
https://doaj.org/article/b98453fdfe814c4481c5ab549118adef
Publikováno v:
JA Clinical Reports, Vol 4, Iss 1, Pp 1-4 (2018)
Abstract Background Polymeraze I and transcript release factor (PTRF) mutations are a newly recognized disease, which cause congenital generalized lipodystrophy associated with myopathy. Case presentation A 29-year-old man (height 126 cm; weight 22 k
Externí odkaz:
https://doaj.org/article/03dd4ad89fea418eac6c4e5645837490
Autor:
Hidemasa Takahashi, Dai Shida, Kyoko Tagawa, Ryo Iwamoto, Makoto Arita, Hiroyuki Arai, Takeo Suzuki
Publikováno v:
BMC Surgery, Vol 17, Iss 1, Pp 1-7 (2017)
Abstract Background This study aimed to reveal the appropriate timing for the intravenous administration of flurbiprofen axetil for preventing mesenteric traction syndrome (MTS), caused by prostacyclin release. Methods In this prospective, randomized
Externí odkaz:
https://doaj.org/article/ddd89540fb4d4170a467fae80bb1a767
Publikováno v:
physica status solidi (a).
Publikováno v:
physica status solidi (a).
Publikováno v:
IEEE Transactions on Electron Devices. 69:88-95
This article reports a systematic study on the effects of the epitaxial layer structure on the electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on freestanding GaN substrates. First, GaN-on-GaN HEMTs were
Publikováno v:
IEEE Transactions on Electron Devices. 67:5421-5426
This article reports a systematic study focused on the mechanical stress effect of field-plate dielectric film on the electric characteristics of AlGaN/GaN high-electron mobility transistors (HEMTs). AlGaN/GaN HEMTs were fabricated on SiC substrates,