Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Hideki Yoshimi"'
Autor:
Jason Reyes, Kouhei Tanaka, Nariaki Hamamoto, Noriaki Maehara, Hiroshi Onoda, Yuji Koga, Yoshiki Nakashima, Shinichi Sezaki, Tsutomu Nagayama, S. Prussin, Yasunori Kawamura, Yoshikazu Hashino, Shigeki Sakai, Hideki Yoshimi, Masayasu Tanjyo, Masahiro Hashimoto, Sei Umisedo
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
Cluster C implantation at low temperature has been studied in terms of amorphous Si (a-Si) formation and elimination of B implanted induced end of range defects (EORDs). Thickness of a-Si can be controlled by C equivalent energy and dose. Monomer C n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b85e50c0dca161a0cb29088e1a7e99
https://doi.org/10.1109/rtp.2010.5623605
https://doi.org/10.1109/rtp.2010.5623605
Autor:
Tsutomu Nagayama, Sei Umisedo, Masahiro Hashimoto, Michael I. Current, Masayasu Tanjyo, Jason Reyes, Yasunori Kawamura, Shinichi Sezaki, Hiroshi Onoda, Yuji Koga, Yoshiki Nakashima, Noriaki Maehara, N. Hamamoto, S. Prussin, Hideki Yoshimi
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
A method of choosing a coupled pair of a doping process and an annealing process that is optimized on the basis of the R s ·x j figure of merit. Differential Hall effect evaluations are used to measure 1/µ def , the defect scatter contribution to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db2818330abeeb4bf7e556e8c8c860c1
https://doi.org/10.1109/rtp.2010.5623787
https://doi.org/10.1109/rtp.2010.5623787
Autor:
Sei Umisedo, Masayasu Tanjyo, Hiroshi Onoda, Yoshiki Nakashima, Noriaki Maehara, K. Kawakami, S. Prussin, Yasunori Kawamura, Masahiro Hashimoto, Nariaki Hamamoto, Shinichi Sezaki, Tsutomu Nagayama, Hideki Yoshimi, Jason Reyes
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
Boron retained dose and carrier activation after spike RTA in Cluster B 18 + (Octadecaborane : B 18 H 11 +) implanted Si have been investigated comparing with BF 2 beamline implanted Si. The retained dose estimated by SIMS depth profile integration i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae6e67725aaf3573073c44205a106a4b
https://doi.org/10.1109/iwjt.2010.5474917
https://doi.org/10.1109/iwjt.2010.5474917
Autor:
Nariaki Hamamoto, Hideki Yoshimi, Nobuo Nagai, Yoshikazu Hashino, Masayasu Tanjyo, Sei Umisedo, Masahiro Hashimoto, Yoshiki Nakashima, Yasunori Kawamura, Hiroshi Onoda, Tsutomu Nagayama, Shinichi Sezaki, Yuji Koga, Noriaki Maehara
Publikováno v:
2010 International Workshop on Junction Technology Extended Abstracts.
Phosphorus transient enhanced diffusion (TED) is caused by interstitial diffusion mechanism. It is important for the efficient suppression of phosphorus diffusion that some carbons could be located on lattice point in the initial stage of re-growth d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::001a7b3fb85dd39b1f7514b5e3ff0075
https://doi.org/10.1109/iwjt.2010.5474979
https://doi.org/10.1109/iwjt.2010.5474979
Publikováno v:
Colloid & Polymer Science; Aug2003, Vol. 281 Issue 8, p760-765, 6p
Publikováno v:
KAGAKU KOGAKU RONBUNSHU. 14:304-308
低部にオリフィスを取り付けたスタンドパイプに空気を吹き込み, オリフィスから粉粒体を排出させる場合の流出特性を明らかにするため, 二種類のガラスビーズを用いてオリフィスにお
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec79699efd702df017d27491462053b3
https://doi.org/10.1252/kakoronbunshu.14.304
https://doi.org/10.1252/kakoronbunshu.14.304