Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Hideki Mutoh"'
Autor:
Nguyen Hoai Ngo, Anh Quang Nguyen, Fabian M. Bufler, Yoshinari Kamakura, Hideki Mutoh, Takayoshi Shimura, Takuji Hosoi, Heiji Watanabe, Philippe Matagne, Kazuhiro Shimonomura, Kohsei Takehara, Edoardo Charbon, Takeharu Goji Etoh
Publikováno v:
Sensors, Vol 20, Iss 23, p 6895 (2020)
The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call “super temporal resolution” the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is selected as a candidate
Externí odkaz:
https://doaj.org/article/61a41ead702d434a9b9000e4d030a0f5
Autor:
Takuji Hosoi, Hideki Mutoh, Heiji Watanabe, Kazuhiro Shimonomura, Philippe Matagne, Takeharu Etoh, Yoshinari Kamakura, F. M. Bufler, Anh Quang Nguyen, Edoardo Charbon, Kohsei Takehara, Nguyen Hoai Ngo, Takayoshi Shimura
Publikováno v:
Sensors, Vol 20, Iss 6895, p 6895 (2020)
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 23
Sensors (Basel, Switzerland)
Sensors
Volume 20
Issue 23
The theoretical temporal resolution limit tT of a silicon photodiode (Si PD) is 11.1 ps. We call &ldquo
super temporal resolution&rdquo
the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is select
super temporal resolution&rdquo
the temporal resolution that is shorter than that limit. To achieve this resolution, Germanium is select
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::beb6054b939f6b6df97079001746c001
https://doi.org/10.3390/s20236895
https://doi.org/10.3390/s20236895
Autor:
Hideki Mutoh
Publikováno v:
IEEE Transactions on Electron Devices. 63:49-56
Physical models and algorithms for use in device simulations of ultrahigh-speed and high-voltage image sensors are reported. In the analyses of ultrahigh-speed image sensors, propagation of the electromagnetic field induced by electrodes cannot be ig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47a4bbb8ff3e476a0e066ad9ce1ecb8a
https://doi.org/10.1109/ted.2015.2442435
https://doi.org/10.1109/ted.2015.2442435
Autor:
Kenji Takubo, Hideki Tominaga, Yasuhisa Tochigi, Hideki Mutoh, Rihito Kuroda, Shigetoshi Sugawa, Yasushi Kondo, Katsuhiko Hanzawa, Yuri Kato, Ryuta Hirose
Publikováno v:
ISSCC
A 400H×256V pixels global-shutter high-speed CMOS image sensor including 128 on-chip memories/pixel has been fabricated in a 0.18-μm 2P4M CMOS with pinned photodiode process. The key technologies of this image sensor are as follows: multiple on-chi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e7faa1a849f1924c06b34553468f56f
https://doi.org/10.1109/jssc.2012.2219685
https://doi.org/10.1109/jssc.2012.2219685
Autor:
Hideki Mutoh
Publikováno v:
The Journal of The Institute of Image Information and Television Engineers. 67:J89-J94
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9257cf5cf4447f08515da76967562f7
https://doi.org/10.3169/itej.67.j89
https://doi.org/10.3169/itej.67.j89
Autor:
Shigetoshi Sugawa, Hideki Mutoh
Publikováno v:
The Journal of The Institute of Image Information and Television Engineers. 62:1319-1325
A novel wave optical simulation method (a localized boundary element method) has been developed. This method enables us to execute 3-D wave optical simulation with much smaller memory space and much shorter calculation time than conventional boundary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1901a3a11af479cfa371c7e96d91686
https://doi.org/10.3169/itej.62.1319
https://doi.org/10.3169/itej.62.1319
Autor:
D. Poggemann, Hideki Mutoh, Albert J. P. Theuwissen, Yasuhide Takano, K. Takehara, Hiromasa Maruno, Arno Ruckelshausen, G. Kreider, Takeharu Etoh, Hideki Soya, Kenji Takubo, Tomoo Okinaka, Yasushi Kondo
Publikováno v:
IEEE Transactions on Electron Devices. 50:144-151
An image sensor for a video camera of 1000000 frames per second (fps) was developed. The specifications of the developed sensor are as follows: 1) frame rate: 1000000 fps; 2) pixel count: 81 120 (=312/spl times/260) pixels; 3) total number of success
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::295630585eaaea52e80973e3b10dcb5c
https://doi.org/10.1109/ted.2002.806474
https://doi.org/10.1109/ted.2002.806474
Autor:
Hideki Mutoh
Publikováno v:
IEEE Transactions on Electron Devices. 50:19-25
The optical and electrical characteristics of CMOS image sensors, such as readout, saturation, reset, charge-voltage conversion, and crosstalk characteristics, are analyzed by a three-dimensional (3-D) device simulator SPECTRA and a 3-D optical simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b385430389b5738894254d1fa043fd5b
https://doi.org/10.1109/ted.2002.806965
https://doi.org/10.1109/ted.2002.806965
Autor:
Hideki Mutoh, Shigeru Masuda
Publikováno v:
Journal of the Chemical Society, Dalton Transactions. :1875-1881
Penning ionization electron spectra resulting from thermal collisions of He*(1s2s, 23S) metastable atoms with gaseous metallocenes, M(C5H5)2 (M = V, Cr, Mn, Fe, Co, Ni, Ru, and Os), were measured to directly probe the spatial electron distribution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d24dbb050009f8f09dc9f44fadf18d3
https://doi.org/10.1039/b111486g
https://doi.org/10.1039/b111486g
Autor:
Hideki Mutoh
Publikováno v:
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
The physical models and algorithms of device simulation for ultra-high speed devices are proposed. The propagation of electromagnetic field induced by electrodes cannot be ignored for analyses of ultra-high speed devices. In order to obtain the consi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d867846e37c693645a27aa909c89685f
https://doi.org/10.1109/sispad.2014.6931604
https://doi.org/10.1109/sispad.2014.6931604