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pro vyhledávání: '"Hideki Haruguchi"'
Autor:
Kensuke Taguchi, Hideki Haruguchi, Kazuhiko Hasegawa, Yasuo Ata, Eisuke Suekawa, Naoto Kaguchi, Yu Nakashima, Yasuhiro Kagawa, Tadaharu Minato
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
It is tough for SiC MOSFET to maintain the same time width (tw) of Unloaded Short Circuit mode Switching (USCS), which we define as the index of the Short Circuit Safety Operation Area (SCSOA) evaluation comparing with Unclamped Inductive Switching (
Autor:
Keiichiro Ide, Daisaku Yoshida, Yoji Nakata, Megumi Yachi, Kazuya Sano, Hideki Haruguchi, Yukio Matsushita, Soneda Shinya, Yasuo Ata, Kudo Tomohito, Tadaharu Minato
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In Unclamped Inductive Switching (UIS) with a small capacitance, the L load current flows into the breakdown point selectively. Vava, which is a peak voltage during this UIS turn-off, is also widely changed by the ON state forward voltage drop Von. A
Publikováno v:
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
IGBTs have two concepts of the structure, the punchthrough type (PT) and the non-punchthrough type (NPT). The NPT-IGBT may be fabricated at low cost compared with the PT-IGBT. For example, the NPT-IGBT may be fabricated on a floating zone wafer, but
Conference
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