Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Hidekazu Takekoshi"'
Autor:
Chosaku Noda, Hidekazu Takekoshi, Riki Ogawa, John G. Hartley, Tadayuki Sugimori, Nobutaka Kikuiri, Koichi Ishii, David J. Pinckney, Ando Atsushi
Publikováno v:
Photomask Technology 2021.
TN5nm HVM where EUVL was implemented on started in the middle of 2020, but EUV mask pattern inspection is still not ready in terms of fully satisfying customers' requirements. There are three tool candidates; optical, actinic, and e-beam inspection.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d94d0edd3288a29be1d76f20485e571
https://doi.org/10.1117/12.2600987
https://doi.org/10.1117/12.2600987
Autor:
Saori Fukui, Aoyama Takashi, Kazuaki Suzuki, Toshimasa Shimoda, Takaharu Miura, Tomoharu Fujiwara, Hiroshi Hirose, Junji Ikeda, Futoshi Mori, Hiroyasu Shimizu, Hidekazu Takekoshi, Shigeru Takemoto, Norihiro Katakura, Takehisa Yahiro, Toru Tanida, Kenji Morita, Yoshiaki Kohama, Suzuki Motoko, Atsushi Yamada, Takaaki Umemoto, Yukiharu Ohkubo, Teruaki Okino, Kaoru Ohmori, Takeshi Yoshioka, Yoichi Watanabe, Yukio Kakizaki, Shintaro Kawata, Shohei Suzuki, Noriyuki Hirayanagi, Shinichi Kojima, Hajime Yamamoto, Jin Udagawa, Kazunari Hada
Publikováno v:
J. Vac. Sci. Technol. B. 22(No. 6):2885-2890
Electron projection lithography (EPL) is a realistic technology for the 65nm node and below, as a complementary technology of optical lithography especially for contacts and gate layers because of its high resolution and large process margin. Nikon h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e760cd5e65e7df933d4ed7b56e7ec454
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100818091
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100818091
Publikováno v:
SPIE Proceedings.
The scaling of semiconductor devices is slowing down because of the difficulty in establishing their functionality at the nano-size level and also because of the limitations in fabrications, mainly the delay of EUV lithography. While multigate device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caf3ccc6e33a39aa00d907286a184fc4
https://doi.org/10.1117/12.2065544
https://doi.org/10.1117/12.2065544
Autor:
Takahito Nakayama, Noriaki Nakayamada, Kenji Ohtoshi, Victor Katsap, Rodney A. Kendall, Hidekazu Takekoshi, Seiichi Nakazawa, Hiroyoshi Ando, Kenichi Saito, Hideo Inoue, Tomohiro Iijima, Akihito Anpo, Yoshinori Kojima, Hirohito Anze, Rieko Nishimura, Takashi Kamikubo, Steven D. Golladay, Jun Yashima
Publikováno v:
SPIE Proceedings.
Many lithography candidates, such as ArF immersion lithography with double-patterning/double-exposure techniques, EUV lithography and nano-imprint lithography, show promising capability for 22-nm half-pitch generation lithography. ArF immersion litho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d42d9388e3cf893d9c60ad2918c5138
https://doi.org/10.1117/12.2065551
https://doi.org/10.1117/12.2065551
Autor:
Hiroshi Fujita, Kazuaki Suzuki, Noriyuki Hirayanagi, Daniel Henry, Tadahiko Takikawa, Martin McCallum, Pietro Cantu, Morihisa Hoga, Carmelo Romeo, Hidekazu Takekoshi
Publikováno v:
SPIE Proceedings.
As we move technology further and further down the geometry scale we are coming upon imaging situations where our use of existing optical lithography is being questioned due to the lack of process margin in manufacturing lines. This is especially app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3793c6352a970c5f9c3ea751c3a33902
https://doi.org/10.1117/12.598751
https://doi.org/10.1117/12.598751
Autor:
Atsushi Yamada, Kaoru Ohmori, Yukiharu Ohkubo, Kazuaki Suzuki, Junji Ikeda, Yoichi Watanabe, Toshimasa Shimoda, Noriyuki Hirayanagi, Takaaki Umemoto, Yukio Kakizaki, Kenji Morita, Takehisa Yahiro, Masaya Miyazaki, Takaharu Miura, Futoshi Mori, Toru Tanida, Shigeru Takemoto, Takeshi Yoshioka, Hidekazu Takekoshi, Kazunari Hada, Jin Udagawa, Shintaro Kawata
Publikováno v:
SPIE Proceedings.
Electron Projection Lithography (EPL) is considered one of promising technologies below 45nm node, especially for contact/via holes and gate layers. EPL has some nice features such as very high resolution to be applied for two device nodes, large pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68daa413a49105ac5d4e386b6072ebb8
https://doi.org/10.1117/12.598687
https://doi.org/10.1117/12.598687
Autor:
Sumito Shimizu, Kazuaki Suzuki, Jin Udagawa, Hidekazu Takekoshi, Junji Ikeda, Tomoharu Fujiwara, Noriyuki Hirayanagi
Publikováno v:
SPIE Proceedings.
The development of Electron Projection Lithography (EPL) has proceeded for more than 10 years since its first description. EPL is regarded as a practical technology for 65 nm technology node and below. Nikon has been developing an EPL tool, named as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed7c0ec97fd3cc98d576910e16c7e63e
https://doi.org/10.1117/12.537008
https://doi.org/10.1117/12.537008
Autor:
Shigeru Takemoto, Yukiharu Ohkubo, Suzuki Motoko, Shinichi Kojima, Kazuya Okamoto, Takeshi Yoshioka, Kaminaga Takeshi, Toru Tanida, Atsushi Yamada, Sumito Shimizu, Hiroyasu Shimizu, Masateru Tokunaga, Keiichi Hirose, Muneki Hamashima, Takaharu Miura, Tatsuo Sato, Kazunari Hada, Teruaki Okino, Yu Sato, Takehisa Yahiro, Jin Udagawa, Tomoharu Fujiwara, Shin-ichi Takahashi, Yoshiaki Kohama, Junji Ikeda, Hajime Yamamoto, Noriyuki Hirayanagi, Shintaro Kawata, Satoshi Katagiri, Hiroshi Hirose, Futoshi Mori, Takaaki Umemoto, Kazuaki Suzuki, Toshimasa Shimoda, Saori Fukui, Yoichi Watanabe, Yukio Kakizaki, Kenji Morita, Hidekazu Takekoshi
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:2686
Electron projection lithography (EPL) is one of the promising technologies below the 65 nm node, especially for contact hole and gate layers. Nikon is developing an EPL exposure tool as an electron beam (EB) stepper and the first generation EB steppe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e876af2c558b980aa2e95e789fffd114
https://doi.org/10.1116/1.1629287
https://doi.org/10.1116/1.1629287
Autor:
Shigeo Hayashi, Hidekazu Takekoshi
Publikováno v:
Japanese Journal of Applied Physics. 35:2921
The third harmonic of a Q-switched Nd:YAG laser is used to decompose iodobenzene C6H5I dissolved in benzene. Photoacoustic (PA) signals are observed simultaneously. They initially have a finite value arising not only from the solvent but also from th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db53cc31073405750a04f8d64737c5bc
https://doi.org/10.1143/jjap.35.2921
https://doi.org/10.1143/jjap.35.2921
Publikováno v:
Japanese Journal of Applied Physics; May 1996, Vol. 35 Issue: 5 p2921-2921, 1p