Výsledky vyhledávání - "Hidekazu Miyairi"

Subthreshold Operation of CAAC-IGZO FPGA by Overdriving of Programmable Routing Switch and Programmable Power Switch

Autor: Masahiro Fujita, Takeshi Aoki, Yuki Okamoto, Hidekazu Miyairi, Takashi Nakagawa, Yoshiyuki Kurokawa, Takayuki Ikeda, Naoto Yamade, Makoto Ikeda, Yoshinori Ieda, Shunpei Yamazaki, Munehiro Kozuma

Publikováno v: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 25:125-138

A field-programmable gate array (FPGA) using a crystalline oxide semiconductor of c-axis-aligned crystal indium-gallium–zinc oxide (CAAC-IGZO) has been developed, which is capable of subthreshold operation used for energy harvesting. To achieve sub

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1e926f90f784775508e5194947e33d13
https://doi.org/10.1109/tvlsi.2016.2571744

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A 25. 3 $\mu$ W at 60 fps $240 \times 160$ Pixel Vision Sensor for Motion Capturing With In-Pixel Nonvolatile Analog Memory Using CAAC-IGZO FET

Autor: Yuki Okamoto, Takashi Nakagawa, Shuhei Maeda, Seiichi Yoneda, Naoto Yamade, Takuro Ohmaru, Makoto Ikeda, Shunpei Yamazaki, Yoshiyuki Kurokawa, Hiroki Inoue, Munehiro Kozuma, Takayuki Ikeda, Yoshinori Ieda, Hidekazu Miyairi

Publikováno v: IEEE Journal of Solid-State Circuits. 51:2168-2179

Utilizing a c-axis-aligned crystalline oxide semiconductor-based FET, we have fabricated a vision sensor with in-pixel nonvolatile analog memory. The sensor realized normal image data capturing, captured differential data of a given reference frame,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::446424a426b788a5cef2c054deab8d98
https://doi.org/10.1109/jssc.2016.2586501

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Normally-Off Computing for Crystalline Oxide Semiconductor-Based Multicontext FPGA Capable of Fine-Grained Power Gating on Programmable Logic Element With Nonvolatile Shadow Register

Autor: Shunpei Yamazaki, Naoto Yamade, Yoshiyuki Kurokawa, Hidekazu Miyairi, Jun Koyama, Masahiro Fujita, Takeshi Aoki, Takashi Nakagawa, Takayuki Ikeda, Munehiro Kozuma, Yuki Okamoto, Yutaka Okazaki

Publikováno v: IEEE Journal of Solid-State Circuits. 50:2199-2211

Normally-off computing (Noff computing) using a multicontext field programmable gate array (MC-FPGA) consisting of crystalline oxide semiconductor FETs has been developed. The Noff computing discussed in this paper is a control architecture for an MC

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::889ee8aa5e6f2c96ea8918a87e76ad8f
https://doi.org/10.1109/jssc.2015.2438824

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A Boosting Pass Gate With Improved Switching Characteristics and No Overdriving for Programmable Routing Switch Based on Crystalline In-Ga-Zn-O Technology

Autor: Takeshi Osada, Yuki Okamoto, Takeshi Aoki, Munehiro Kozuma, Shunpei Yamazaki, Naoto Yamade, Yutaka Okazaki, Takashi Nakagawa, Takayuki Ikeda, Masahiro Fujita, Masataka Ikeda, Yoshiyuki Kurokawa, Hidekazu Miyairi, Jun Koyama

Publikováno v: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 23:422-434

A boosting pass gate (BPG) suitable for a programmable routing switch including a $c$ -axis aligned crystal In-Ga-Zn-O (CAAC-IGZO) field effect transistor (FET) is proposed. The CAAC-IGZO is one of crystalline oxide semiconductors (OS). The proposed

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c70e83f380d1a8777e9eecef9c7c1504
https://doi.org/10.1109/tvlsi.2014.2316871

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(Invited) Multilevel Cell Nonvolatile Memory with Field-effect Transistor Using Crystalline Oxide Semiconductor

Autor: Tatsuya Onuki, Takashi Okuda, Masayuki Sakakura, Takanori Matsuzaki, Takahiko Ishizu, Yutaka Shionoiri, Kiyoshi Kato, Jun Koyama, Yoshitaka Yamamoto, Hidekazu Miyairi, Shunpei Yamazaki, Hiroki Inoue, Shuhei Nagatsuka, Tomoaki Atsumi

Publikováno v: ECS Transactions. 64:101-111

Multilevel cell nonvolatile memory has been developed with a field-effect transistor (FET) containing a crystalline oxide semiconductor (OS), specifically c-axis aligned crystalline In-Ga-Zn-oxide (CAAC-IGZO). The memory is called nonvolatile oxide s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::65dd0d5dee93fbd5efef6eff73bf73c9
https://doi.org/10.1149/06414.0101ecst

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Novel Application of Crystalline Indium-Gallium-Zinc-Oxide Technology to LSI: Dynamically Reconfigurable Programmable Logic Device Based on Multi-Context Architecture

Autor: Yutaka Okazaki, Munehiro Kozuma, Hidekazu Miyairi, Takayuki Ikeda, Naoto Yamade, Shunpei Yamazaki, Takashi Nakagawa, Jun Koyama, Yuki Okamoto, Masataka Ikeda, Takeshi Aoki, Yoshiyuki Kurokawa, Takeshi Osada

Publikováno v: ECS Transactions. 54:141-149

A pass gate (PG) configured with a configuration memory (CM) composed of a c-axis aligned crystalline In-Ga-Zn-O (CAAC-IGZO) FET and a pass transistor composed of an NMOS FET is applied to a multi-context routing switch (MC-RS) of a dynamically recon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1c82835e489f63afb1ad2a3b15486e94
https://doi.org/10.1149/05401.0141ecst

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A 16-Level-Cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET

Autor: Masayuki Sakakura, Yoshitaka Yamamoto, Tatsuya Onuki, Yutaka Shionoiri, Takashi Okuda, Yoshinori Ieda, Takahiko Ishizu, Takanori Matsuzaki, Shunpei Yamazaki, Hidekazu Miyairi, Naoto Yamade, Jun Koyama, Kiyoshi Kato, Shuhei Nagatsuka, Hiroki Inoue

Publikováno v: 2015 IEEE International Memory Workshop (IMW).

A 16-level cell is demonstrated using a test chip of nonvolatile oxide semiconductor RAM comprising c-axis aligned crystalline In-Ga-Zn oxide FETs. A read circuit composed of voltage followers outputs a read voltage with a maximum distribution of 37

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::46779389e1b66b5ce0c02246ba6742cd
https://doi.org/10.1109/imw.2015.7150266

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6.5 25.3μW at 60fps 240×160-pixel vision sensor for motion capturing with in-pixel non-volatile analog memory using crystalline oxide semiconductor FET

Autor: Yuki Okamoto, Takuro Ohmaru, Takashi Nakagawa, Shunpei Yamazaki, Makoto Ikeda, Naoto Yamade, Shuhei Maeda, Hiroki Inoue, Yoshiyuki Kurokawa, Yoshinori Ieda, Hidekazu Miyairi, Seiichi Yoneda, Takayuki Ikeda, Munehiro Kozuma

Publikováno v: ISSCC

A vision sensor used to capture motion must operate with very low power when used in sensor networks where power is very limited. Frame-based [1] and event-driven [2,3] vision sensors have been reported. The former captures motion from the difference

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b447a10dc00f6e1529096e81f16cd817
https://doi.org/10.1109/isscc.2015.7062954

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16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method

Autor: Yoshitaka Yamamoto, Tatsuya Onuki, Shunpei Yamazaki, Jun Koyama, Takanori Matsuzaki, Shuhei Nagatsuka, Kiyoshi Kato, Yutaka Shionoiri, Tomoaki Atsumi, Masayuki Sakakura, Naoto Yamade, Masahiro Fujita, Hiroki Inoue, Takahiko Ishizu, Hidekazu Miyairi, Takashi Okuda, Yoshinori Ieda

Publikováno v: ISSCC

As the number of devices connected to the Internet increases, servers and mobile devices must process increasingly large volumes of data, and also accommodate the increasing demand for high-speed and large-capacity working memory keeping the power co

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::57ca6880a4bdf54af723a85cced5dfa7
https://doi.org/10.1109/isscc.2015.7063048

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30.9 Normally-off computing with crystalline InGaZnO-based FPGA

Autor: Shunpei Yamazaki, Masataka Ikeda, Munehiro Kozuma, Jun Koyama, Yuki Okamoto, Takashi Nakagawa, Hidekazu Miyairi, Yutaka Okazaki, Takeshi Osada, Naoto Yamade, Yoshiyuki Kurokawa, Masahiro Fujita, Takayuki Ikeda, Takeshi Aoki

Publikováno v: ISSCC

An FPGA employing c-axis aligned crystal In-Ga-Zn oxide (CAAC-IGZO) FET [1] based configuration memories (CMs) is known to need no reconfiguration thanks to nonvolatile CMs, shows high operation speed due to boosting effect of pass gates used in rout

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b162276f21620812e9c4bff04d2b01a4
https://doi.org/10.1109/isscc.2014.6757531

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