Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Hidekatsu Onose"'
Publikováno v:
IEEE Transactions on Electron Devices. 67:2850-2853
An edge termination structure with enhanced field-limiting rings (enhanced FLRs) is proposed to stabilize the breakdown voltage against the surface charge. The pitches of the enhanced rings are designed to mitigate the electric field and expand the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f94852c92226017a433210f511038484
https://doi.org/10.1109/ted.2020.2992577
https://doi.org/10.1109/ted.2020.2992577
Publikováno v:
Solid-State Electronics. 129:200-205
The effect of the p gate dose on the characteristics of the gate-source diode in SiC static induction transistors (SIT) was investigated. It was found that a dose of 1.5 × 1014 cm−2 yields a pn junction breakdown voltage higher than 60 V and good
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0383b6a5d27aad49629cb339b364f03
https://doi.org/10.1016/j.sse.2016.11.004
https://doi.org/10.1016/j.sse.2016.11.004
Autor:
Hiroshi Miki, Kan Yasui, Takashi Hirao, Yoshiaki Toyota, Mutsuhiro Mori, Hiroyuki Okino, Jiro Hasegawa, Kazuhiro Mochizuki, Norifumi Kameshiro, Tetsuo Oda, Hiroyuki Matsuhima, Hidekatsu Onose, Renichi Yamada, Natsuki Yokoyama
Publikováno v:
Materials Science Forum. 858:1091-1094
A 3.3-kV SiC-Si hybrid module, composed of a low-forward-voltage (VF) SiC junction-barrier-Schottky (JBS) diode and a low-saturation-voltage VCE(sat) Si trench IGBT was fabricated and demonstrated highly efficient operation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf4d79007fa28bd29bb769693e280db
https://doi.org/10.4028/www.scientific.net/msf.858.1091
https://doi.org/10.4028/www.scientific.net/msf.858.1091
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:Q271-Q273
A graded junction termination extension (JTE) is proposed to suppress the variation of avalanche voltages for SiC power devices. A 7-zone JTE was investigated to realize the concept of the graded JTE. Avalanche voltages higher than 3,880 V were expec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93d4cbd82e0e735832789832252bd373
https://doi.org/10.1149/2.0281610jss
https://doi.org/10.1149/2.0281610jss
Publikováno v:
Materials Science Forum. :1127-1130
We developed a JBS diode with characteristics of a low forward voltage and a low leakage current at 3kV. Further, we built a prototype of a 3kV/200A hybrid module, equipped with Si-IGBTs and SiC-JBS diodes. We attempted to decrease the recovery loss,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb7ed0d9289a976ed14ace14ebbc78f
https://doi.org/10.4028/www.scientific.net/msf.645-648.1127
https://doi.org/10.4028/www.scientific.net/msf.645-648.1127
Publikováno v:
IEEE Transactions on Electron Devices. 56:992-997
Forward current density (JF)-forward voltage (VF) characteristics are experimentally and computationally investigated for 4H-silicon carbide junction barrier Schottky (JBS) diodes with a lightly doped (3 - 5 times1015 cm-3) drift layer and 2-mum-wide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdb4070bbd937f747d954237a85b06b7
https://doi.org/10.1109/ted.2009.2015165
https://doi.org/10.1109/ted.2009.2015165
Publikováno v:
Materials Science Forum. :1059-1062
We developed normally-off 4H-SiC vertical junction field effect transistors (JFETs) with large current density. The effect of forming an abrupt junction between the gate and the channel was simulated, and vertical JFETs were then fabricated with abru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853c9deb188b464179f2501623fd1b7c
https://doi.org/10.4028/www.scientific.net/msf.600-603.1059
https://doi.org/10.4028/www.scientific.net/msf.600-603.1059
Autor:
Hidekatsu Onose, Kazuhiro Mochizuki
Publikováno v:
Materials Science Forum. :607-610
We demonstrate a Dual-Pearson approach to model ion-implanted Al concentration profiles in 4H-SiC for high-precision design of high-voltage power devices. Based on the Monte Carlo simulated data for 35-400 keV implantation, we determine the nine Dual
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bc7e2e631b7e595fbf8bb2dbece23e0
https://doi.org/10.4028/www.scientific.net/msf.600-603.607
https://doi.org/10.4028/www.scientific.net/msf.600-603.607
Publikováno v:
IEEE Transactions on Electron Devices. 55:1997-2003
This paper presents a detailed analysis and precise modeling of multiple-energy Al implantations necessary for boxlike profiles in the p+-region of 4H-SiC power devices. To demonstrate the balance between "scatter-in channeling" and "amorphization-su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2cb550b448e3c85ee80ecd91e8c850c
https://doi.org/10.1109/ted.2008.926631
https://doi.org/10.1109/ted.2008.926631
Publikováno v:
Materials Science Forum. :1227-1230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c3cadf76deeb2b140b81a69fd11b3b
https://doi.org/10.4028/www.scientific.net/msf.389-393.1227
https://doi.org/10.4028/www.scientific.net/msf.389-393.1227